Amorphization processes in ion implanted Si. Temperature dependence

T. Motooka, F. Kobayashi, P. Fons, T. Tokuyama, T. Suzuki, N. Natsuaki

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.

Original languageEnglish
Pages44-46
Number of pages3
Publication statusPublished - 1991 Jan 1
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Conference

Conference23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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