Amorphous phase of GeTe-based phase-change memory alloys: Polyvalency of Ge-Te bonding and polyamorphism

Alexander V. Kolobov, Paul Fons, Milos Krbal, Junji Tominaga

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The structure of the amorphous phase of GeTe-based phase-change materials is discussed. Comparison of the Ge(4):Te(2) and Ge(3):Te(3) configurations present in the amorphous phase suggests that the former is locally more stable while the latter can lower its energy due to 'resonance' interactions in structures within more extended order. We further demonstrate that polyvalency of the Ge-Te bonds can lead to the formation of negative-U defects accounting for the high resistivity of the amorphous phase. Finally, polyamorphysm of the amorphous phase of Ge 2Sb 2Te 5 is discussed.

Original languageEnglish
Pages (from-to)1031-1035
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1
Externally publishedYes

Keywords

  • amorphous
  • phase-change
  • polyamorphism
  • polyvalency
  • structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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