Abstract
A novel pump-noise-suppressed semiconductor laser scheme is proposed. In this scheme, electrons injected into a stable intersubband state dressed by strongly resonant optical couplings stimulate amplitude-squeezed light with extremely low-threshold. Because of its high conversion efficiency and short stimulated emission lifetime at low injection current regime, this scheme can generate weak broad-band amplitude- squeezed light. We numerically estimate the characteristics of gain coefficient and output noise spectrum of this scheme.
Original language | English |
---|---|
Pages (from-to) | 201-210 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3283 |
DOIs | |
Publication status | Published - 1998 Dec 1 |
Event | Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: 1998 Jan 26 → 1998 Jan 26 |
Keywords
- Amplitude-squeezed light
- Pump-noise-suppressed laser
- Quantum well structure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering