An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface

Takeshi Matsubara; Isamu Hayashi; Abul Hasan Johari; Satoshi Kumaki; Kaoru Kohira; Tadahiro Kuroda; Hiroki Ishikuro

doi:10.1109/RWS.2011.5725473

An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface

Takeshi Matsubara, Isamu Hayashi, Abul Hasan Johari, Satoshi Kumaki, Kaoru Kohira, Tadahiro Kuroda, Hiroki Ishikuro

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

This paper presents a pulse-based inductivecoupling transceiver in 65nm CMOS for high-speed wireless proximity communication. The transceiver operates at 0.5V supply voltage. A pulse bootstrap circuit and a common drain output stage enables transmitter to operate at ultralow voltage. In the receiver, a gain boosted common-gate amplifier is used to reduce the input impedance and suppress the ringing of received pulse signal. The data rate and energy efficiency are 1.1Gb/s/ch and 0.91pJ/bit, respectively at 0.5V supply voltage. The data rate can be increased to 1.7Gb/s/ch at 0.75V.

Original language	English
Title of host publication	2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011
Pages	74-77
Number of pages	4
DOIs	https://doi.org/10.1109/RWS.2011.5725473
Publication status	Published - 2011 Mar 31
Event	2011 IEEE Radio and Wireless Symposium, RWS 2011 - Phoenix, AZ, United States Duration: 2011 Jan 16 → 2011 Jan 19

Publication series

Name	2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011

Other

Other	2011 IEEE Radio and Wireless Symposium, RWS 2011
Country/Territory	United States
City	Phoenix, AZ
Period	11/1/16 → 11/1/19

Keywords

Bootstrap
High speed interface
Inductive-coupling
Proximity communication
Ultra-low voltage

ASJC Scopus subject areas

Computer Networks and Communications
Communication

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/RWS.2011.5725473

Cite this

Matsubara, T., Hayashi, I., Johari, A. H., Kumaki, S., Kohira, K., Kuroda, T., & Ishikuro, H. (2011). An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface. In 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011 (pp. 74-77). [5725473] (2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011). https://doi.org/10.1109/RWS.2011.5725473

An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface. / Matsubara, Takeshi; Hayashi, Isamu; Johari, Abul Hasan et al.

2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011. 2011. p. 74-77 5725473 (2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsubara, T, Hayashi, I, Johari, AH, Kumaki, S, Kohira, K, Kuroda, T & Ishikuro, H 2011, An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface. in 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011., 5725473, 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011, pp. 74-77, 2011 IEEE Radio and Wireless Symposium, RWS 2011, Phoenix, AZ, United States, 11/1/16. https://doi.org/10.1109/RWS.2011.5725473

Matsubara T, Hayashi I, Johari AH, Kumaki S, Kohira K, Kuroda T et al. An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface. In 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011. 2011. p. 74-77. 5725473. (2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011). doi: 10.1109/RWS.2011.5725473

Matsubara, Takeshi ; Hayashi, Isamu ; Johari, Abul Hasan et al. / An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface. 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011. 2011. pp. 74-77 (2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Radio and Wireless Symposium, RWS 2011).

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abstract = "This paper presents a pulse-based inductivecoupling transceiver in 65nm CMOS for high-speed wireless proximity communication. The transceiver operates at 0.5V supply voltage. A pulse bootstrap circuit and a common drain output stage enables transmitter to operate at ultralow voltage. In the receiver, a gain boosted common-gate amplifier is used to reduce the input impedance and suppress the ringing of received pulse signal. The data rate and energy efficiency are 1.1Gb/s/ch and 0.91pJ/bit, respectively at 0.5V supply voltage. The data rate can be increased to 1.7Gb/s/ch at 0.75V.",

keywords = "Bootstrap, High speed interface, Inductive-coupling, Proximity communication, Ultra-low voltage",

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An 0.5V, 0.91pJ/bit, 1.1Gb/s/ch transceiver in 65nm CMOS for high-speed wireless proximity interface

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

UN SDGs

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