An addressable quantum dot qubit with fault-tolerant control-fidelity

M. Veldhorst, J. C C Hwang, C. H. Yang, A. W. Leenstra, B. De Ronde, J. P. Dehollain, J. T. Muhonen, F. E. Hudson, Kohei M Itoh, A. Morello, A. S. Dzurak

Research output: Contribution to journalArticle

304 Citations (Scopus)

Abstract

Exciting progress towards spin-based quantum computing1,2 has recently been made with qubits realized using nitrogen-vacancy centres in diamond and phosphorus atoms in silicon3. For example, long coherence times were made possible by the presence of spin-free isotopes of carbon4 and silicon5. However, despite promising single-atom nanotechnologies6, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered1, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here, we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford-based randomized benchmarking and consistent with that required for fault-tolerant quantum computing7,8. This qubit has dephasing time T2 =120 μs and coherence time T2 28 ms, both orders of magnitude larger than in other types of semiconductor qubit. By gate-voltage-tuning the electron g∗-factor we can Stark shift the electron spin resonance frequency by more than 3,000 times the 2.4 kHz electron spin resonance linewidth, providing a direct route to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.

Original languageEnglish
Pages (from-to)981-985
Number of pages5
JournalNature Nanotechnology
Volume9
Issue number12
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Semiconductor quantum dots
Paramagnetic resonance
quantum dots
Atoms
Exchange coupling
Diamond
Silicon
Benchmarking
Isotopes
Linewidth
Phosphorus
Vacancies
Diamonds
electron paramagnetic resonance
Nitrogen
Tuning
Semiconductor materials
Electrons
Electric potential
atoms

ASJC Scopus subject areas

  • Bioengineering
  • Biomedical Engineering
  • Materials Science(all)
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Veldhorst, M., Hwang, J. C. C., Yang, C. H., Leenstra, A. W., De Ronde, B., Dehollain, J. P., ... Dzurak, A. S. (2014). An addressable quantum dot qubit with fault-tolerant control-fidelity. Nature Nanotechnology, 9(12), 981-985. https://doi.org/10.1038/nnano.2014.216

An addressable quantum dot qubit with fault-tolerant control-fidelity. / Veldhorst, M.; Hwang, J. C C; Yang, C. H.; Leenstra, A. W.; De Ronde, B.; Dehollain, J. P.; Muhonen, J. T.; Hudson, F. E.; Itoh, Kohei M; Morello, A.; Dzurak, A. S.

In: Nature Nanotechnology, Vol. 9, No. 12, 01.01.2014, p. 981-985.

Research output: Contribution to journalArticle

Veldhorst, M, Hwang, JCC, Yang, CH, Leenstra, AW, De Ronde, B, Dehollain, JP, Muhonen, JT, Hudson, FE, Itoh, KM, Morello, A & Dzurak, AS 2014, 'An addressable quantum dot qubit with fault-tolerant control-fidelity', Nature Nanotechnology, vol. 9, no. 12, pp. 981-985. https://doi.org/10.1038/nnano.2014.216
Veldhorst M, Hwang JCC, Yang CH, Leenstra AW, De Ronde B, Dehollain JP et al. An addressable quantum dot qubit with fault-tolerant control-fidelity. Nature Nanotechnology. 2014 Jan 1;9(12):981-985. https://doi.org/10.1038/nnano.2014.216
Veldhorst, M. ; Hwang, J. C C ; Yang, C. H. ; Leenstra, A. W. ; De Ronde, B. ; Dehollain, J. P. ; Muhonen, J. T. ; Hudson, F. E. ; Itoh, Kohei M ; Morello, A. ; Dzurak, A. S. / An addressable quantum dot qubit with fault-tolerant control-fidelity. In: Nature Nanotechnology. 2014 ; Vol. 9, No. 12. pp. 981-985.
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