An electrically driven, ultrahigh-speed, on-chip light emitter based on carbon nanotubes

Tatsuya Mori, Yohei Yamauchi, Satoshi Honda, Hideyuki Maki

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The integration of high-speed light emitters on silicon chips is an important issue that must be resolved in order to realize on-chip or interchip optical interconnects. Here, we demonstrate the first electrically driven ultrafast carbon nanotube (CNT) light emitter based on blackbody radiation with a response speed (1-10 Gbps) that is more than 106 times higher than that of conventional incandescent emitters and is either higher than or comparable to that of light-emitting diodes or laser diodes. This high-speed response is explained by the extremely fast temperature response of the CNT film, which is dominated by the small heat capacity of the CNT film and its high heat dissipation to the substrate. Moreover, we experimentally demonstrate 140 ps width pulsed light generation and real-time optical communication. This CNT-based emitter with the advantages of ultrafast response speeds, a small footprint, and integration on silicon can enable novel architectures for optical interconnects, photonic, and optoelectronic integrated circuits.

Original languageEnglish
Pages (from-to)3277-3283
Number of pages7
JournalNano Letters
Volume14
Issue number6
DOIs
Publication statusPublished - 2014 Jun 11

Fingerprint

Carbon Nanotubes
Carbon nanotubes
emitters
carbon nanotubes
chips
optical interconnects
Optical interconnects
Silicon
high speed
Integrated optoelectronics
silicon
footprints
Optical communication
Heat losses
Photonics
Specific heat
integrated circuits
Light emitting diodes
optical communication
Semiconductor lasers

Keywords

  • blackbody radiation
  • Carbon nanotubes
  • high-speed light emitter
  • optical communication

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

An electrically driven, ultrahigh-speed, on-chip light emitter based on carbon nanotubes. / Mori, Tatsuya; Yamauchi, Yohei; Honda, Satoshi; Maki, Hideyuki.

In: Nano Letters, Vol. 14, No. 6, 11.06.2014, p. 3277-3283.

Research output: Contribution to journalArticle

Mori, Tatsuya ; Yamauchi, Yohei ; Honda, Satoshi ; Maki, Hideyuki. / An electrically driven, ultrahigh-speed, on-chip light emitter based on carbon nanotubes. In: Nano Letters. 2014 ; Vol. 14, No. 6. pp. 3277-3283.
@article{6c0c17eaf9c0449cb18dde28c8d1d3d3,
title = "An electrically driven, ultrahigh-speed, on-chip light emitter based on carbon nanotubes",
abstract = "The integration of high-speed light emitters on silicon chips is an important issue that must be resolved in order to realize on-chip or interchip optical interconnects. Here, we demonstrate the first electrically driven ultrafast carbon nanotube (CNT) light emitter based on blackbody radiation with a response speed (1-10 Gbps) that is more than 106 times higher than that of conventional incandescent emitters and is either higher than or comparable to that of light-emitting diodes or laser diodes. This high-speed response is explained by the extremely fast temperature response of the CNT film, which is dominated by the small heat capacity of the CNT film and its high heat dissipation to the substrate. Moreover, we experimentally demonstrate 140 ps width pulsed light generation and real-time optical communication. This CNT-based emitter with the advantages of ultrafast response speeds, a small footprint, and integration on silicon can enable novel architectures for optical interconnects, photonic, and optoelectronic integrated circuits.",
keywords = "blackbody radiation, Carbon nanotubes, high-speed light emitter, optical communication",
author = "Tatsuya Mori and Yohei Yamauchi and Satoshi Honda and Hideyuki Maki",
year = "2014",
month = "6",
day = "11",
doi = "10.1021/nl500693x",
language = "English",
volume = "14",
pages = "3277--3283",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - An electrically driven, ultrahigh-speed, on-chip light emitter based on carbon nanotubes

AU - Mori, Tatsuya

AU - Yamauchi, Yohei

AU - Honda, Satoshi

AU - Maki, Hideyuki

PY - 2014/6/11

Y1 - 2014/6/11

N2 - The integration of high-speed light emitters on silicon chips is an important issue that must be resolved in order to realize on-chip or interchip optical interconnects. Here, we demonstrate the first electrically driven ultrafast carbon nanotube (CNT) light emitter based on blackbody radiation with a response speed (1-10 Gbps) that is more than 106 times higher than that of conventional incandescent emitters and is either higher than or comparable to that of light-emitting diodes or laser diodes. This high-speed response is explained by the extremely fast temperature response of the CNT film, which is dominated by the small heat capacity of the CNT film and its high heat dissipation to the substrate. Moreover, we experimentally demonstrate 140 ps width pulsed light generation and real-time optical communication. This CNT-based emitter with the advantages of ultrafast response speeds, a small footprint, and integration on silicon can enable novel architectures for optical interconnects, photonic, and optoelectronic integrated circuits.

AB - The integration of high-speed light emitters on silicon chips is an important issue that must be resolved in order to realize on-chip or interchip optical interconnects. Here, we demonstrate the first electrically driven ultrafast carbon nanotube (CNT) light emitter based on blackbody radiation with a response speed (1-10 Gbps) that is more than 106 times higher than that of conventional incandescent emitters and is either higher than or comparable to that of light-emitting diodes or laser diodes. This high-speed response is explained by the extremely fast temperature response of the CNT film, which is dominated by the small heat capacity of the CNT film and its high heat dissipation to the substrate. Moreover, we experimentally demonstrate 140 ps width pulsed light generation and real-time optical communication. This CNT-based emitter with the advantages of ultrafast response speeds, a small footprint, and integration on silicon can enable novel architectures for optical interconnects, photonic, and optoelectronic integrated circuits.

KW - blackbody radiation

KW - Carbon nanotubes

KW - high-speed light emitter

KW - optical communication

UR - http://www.scopus.com/inward/record.url?scp=84902299823&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902299823&partnerID=8YFLogxK

U2 - 10.1021/nl500693x

DO - 10.1021/nl500693x

M3 - Article

VL - 14

SP - 3277

EP - 3283

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 6

ER -