An EMI-less full-bridge inverter for high speed SiC switching devices

Jun Sakata, Masao Taguchi, Shoichi Sasaki, Tadahiro Kuroda, Keiji Toda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

To improve the efficiency of inverters used in hybrid cars and electric vehicles (EVs), SiC-MOSFET transistors are used to minimize the switching losses by high-speed switching. However, as the speed increases, surges and ringing occur in the output voltage, and these can cause electromagnetic interference (EMI). In this paper, we study how this issue can be addressed by using a full bridge inverter to suppress common-mode voltages and cancel ringings currents with opposite phase that are generated when driving at high speed. In most cases, one should assume that transistors that are driven simultaneously have slightly different I-V characteristics. Due to this variation, the ringing cannot be completely canceled, resulting in a common-mode voltage. Although this is liable to cause EMI, we also found that if the two transistors are operated close to the point where the maximum switching current occurs, the common-mode voltage fluctuation can be sufficiently suppressed at any current. We analyzed these characteristics in a simulation using a SiC-MOSFET transistor model, and experimentally verified its behavior in a prototype inverter.

Original languageEnglish
Title of host publicationAPEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2570-2576
Number of pages7
Volume2018-March
ISBN (Electronic)9781538611807
DOIs
Publication statusPublished - 2018 Apr 18
Event33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 - San Antonio, United States
Duration: 2018 Mar 42018 Mar 8

Other

Other33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
CountryUnited States
CitySan Antonio
Period18/3/418/3/8

Fingerprint

Signal interference
Transistors
Electric potential
Electric vehicles
Railroad cars

Keywords

  • Common-mode
  • EMI
  • Full-bridge
  • Inverter
  • SiC

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sakata, J., Taguchi, M., Sasaki, S., Kuroda, T., & Toda, K. (2018). An EMI-less full-bridge inverter for high speed SiC switching devices. In APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition (Vol. 2018-March, pp. 2570-2576). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2018.8341379

An EMI-less full-bridge inverter for high speed SiC switching devices. / Sakata, Jun; Taguchi, Masao; Sasaki, Shoichi; Kuroda, Tadahiro; Toda, Keiji.

APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Vol. 2018-March Institute of Electrical and Electronics Engineers Inc., 2018. p. 2570-2576.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakata, J, Taguchi, M, Sasaki, S, Kuroda, T & Toda, K 2018, An EMI-less full-bridge inverter for high speed SiC switching devices. in APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 2570-2576, 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018, San Antonio, United States, 18/3/4. https://doi.org/10.1109/APEC.2018.8341379
Sakata J, Taguchi M, Sasaki S, Kuroda T, Toda K. An EMI-less full-bridge inverter for high speed SiC switching devices. In APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Vol. 2018-March. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2570-2576 https://doi.org/10.1109/APEC.2018.8341379
Sakata, Jun ; Taguchi, Masao ; Sasaki, Shoichi ; Kuroda, Tadahiro ; Toda, Keiji. / An EMI-less full-bridge inverter for high speed SiC switching devices. APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Vol. 2018-March Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2570-2576
@inproceedings{1a9e917b82fc489fbb42eac6b468daf4,
title = "An EMI-less full-bridge inverter for high speed SiC switching devices",
abstract = "To improve the efficiency of inverters used in hybrid cars and electric vehicles (EVs), SiC-MOSFET transistors are used to minimize the switching losses by high-speed switching. However, as the speed increases, surges and ringing occur in the output voltage, and these can cause electromagnetic interference (EMI). In this paper, we study how this issue can be addressed by using a full bridge inverter to suppress common-mode voltages and cancel ringings currents with opposite phase that are generated when driving at high speed. In most cases, one should assume that transistors that are driven simultaneously have slightly different I-V characteristics. Due to this variation, the ringing cannot be completely canceled, resulting in a common-mode voltage. Although this is liable to cause EMI, we also found that if the two transistors are operated close to the point where the maximum switching current occurs, the common-mode voltage fluctuation can be sufficiently suppressed at any current. We analyzed these characteristics in a simulation using a SiC-MOSFET transistor model, and experimentally verified its behavior in a prototype inverter.",
keywords = "Common-mode, EMI, Full-bridge, Inverter, SiC",
author = "Jun Sakata and Masao Taguchi and Shoichi Sasaki and Tadahiro Kuroda and Keiji Toda",
year = "2018",
month = "4",
day = "18",
doi = "10.1109/APEC.2018.8341379",
language = "English",
volume = "2018-March",
pages = "2570--2576",
booktitle = "APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - An EMI-less full-bridge inverter for high speed SiC switching devices

AU - Sakata, Jun

AU - Taguchi, Masao

AU - Sasaki, Shoichi

AU - Kuroda, Tadahiro

AU - Toda, Keiji

PY - 2018/4/18

Y1 - 2018/4/18

N2 - To improve the efficiency of inverters used in hybrid cars and electric vehicles (EVs), SiC-MOSFET transistors are used to minimize the switching losses by high-speed switching. However, as the speed increases, surges and ringing occur in the output voltage, and these can cause electromagnetic interference (EMI). In this paper, we study how this issue can be addressed by using a full bridge inverter to suppress common-mode voltages and cancel ringings currents with opposite phase that are generated when driving at high speed. In most cases, one should assume that transistors that are driven simultaneously have slightly different I-V characteristics. Due to this variation, the ringing cannot be completely canceled, resulting in a common-mode voltage. Although this is liable to cause EMI, we also found that if the two transistors are operated close to the point where the maximum switching current occurs, the common-mode voltage fluctuation can be sufficiently suppressed at any current. We analyzed these characteristics in a simulation using a SiC-MOSFET transistor model, and experimentally verified its behavior in a prototype inverter.

AB - To improve the efficiency of inverters used in hybrid cars and electric vehicles (EVs), SiC-MOSFET transistors are used to minimize the switching losses by high-speed switching. However, as the speed increases, surges and ringing occur in the output voltage, and these can cause electromagnetic interference (EMI). In this paper, we study how this issue can be addressed by using a full bridge inverter to suppress common-mode voltages and cancel ringings currents with opposite phase that are generated when driving at high speed. In most cases, one should assume that transistors that are driven simultaneously have slightly different I-V characteristics. Due to this variation, the ringing cannot be completely canceled, resulting in a common-mode voltage. Although this is liable to cause EMI, we also found that if the two transistors are operated close to the point where the maximum switching current occurs, the common-mode voltage fluctuation can be sufficiently suppressed at any current. We analyzed these characteristics in a simulation using a SiC-MOSFET transistor model, and experimentally verified its behavior in a prototype inverter.

KW - Common-mode

KW - EMI

KW - Full-bridge

KW - Inverter

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=85046937266&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046937266&partnerID=8YFLogxK

U2 - 10.1109/APEC.2018.8341379

DO - 10.1109/APEC.2018.8341379

M3 - Conference contribution

AN - SCOPUS:85046937266

VL - 2018-March

SP - 2570

EP - 2576

BT - APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition

PB - Institute of Electrical and Electronics Engineers Inc.

ER -