Abstract
This paper describes an integrated MOS magnetic sensor with chopper-stabilized amplifier. The integrated magnetic sensor has been fabricated using the standard n-channel E/D(enhancement/depletion) MOS process technology. A sensing element with a dual-source dual-drain structure in the MOSFET suitable for the chopper driving has been developed, and is called split-source-drain MAGFET. A depletion-mode structure is used for the MAGFET to reduce the 1/f noise by applying a negative gate bias voltage. The integration of the chopper-stabilized amplifier with the silicon magnetic sensor leads to a reduction of the 1/f noise, the offset, and the offset drift of the amplifier, as well as to an enhancement of the equivalent sensitivity. The integrated magnetic sensor has a sensitivity of 5.5 V/T and the resolution of about 50 μT with 1 kHz bandwidth.
| Original language | English |
|---|---|
| Pages (from-to) | 1-12 |
| Number of pages | 12 |
| Journal | Sensors and Materials |
| Volume | 8 |
| Issue number | 1 |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
Keywords
- Chopper stabilization
- Integrated sensor
- Magnetic sensor
- Split-source-drain MAGFET
ASJC Scopus subject areas
- Instrumentation
- Materials Science(all)