Analysis and design considerations of three-dimensional vector accelerometer using SOI structure for wide temperature range

Hidekuni Takao, Yoshinori Matsumoto, Heedon Seo, Makoto Ishida, Tetsuro Nakamura

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The temperature and output characteristics of a three-dimensional vector accelerometer using silicon on insulator (SOI) structure are studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method (FEM) simulation program ANSYS, and the influence of the thermal stress on the TCO is estimated with the obtained expressions. Experimental results agree well with these theoretical results. Design considerations that enable the accelerometer to have desirable characteristics are discussed with reference to the expressions and the results of FEM simulation.

Original languageEnglish
Pages (from-to)91-97
Number of pages7
JournalSensors and Actuators, A: Physical
Volume55
Issue number2-3
DOIs
Publication statusPublished - 1996 Jul 31
Externally publishedYes

Keywords

  • 3-D detection
  • Accelerometers
  • FEM simulation
  • SOI technology
  • Thermal residual stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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