Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Chika Tanaka, Daisuke Hagishima, Ken Uchida, Toshinori Numata

Research output: Contribution to journalArticle

Abstract

Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.

Original languageEnglish
Pages (from-to)27-31
Number of pages5
JournalSolid-State Electronics
Volume86
DOIs
Publication statusPublished - 2013

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Drain current
Threshold voltage
threshold voltage
Nanowires
Transistors
nanowires
transistors
electric potential
Field effect transistors
Analytical models
field effect transistors

Keywords

  • Analytical model
  • Silicon nanowire transistor
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors. / Tanaka, Chika; Hagishima, Daisuke; Uchida, Ken; Numata, Toshinori.

In: Solid-State Electronics, Vol. 86, 2013, p. 27-31.

Research output: Contribution to journalArticle

Tanaka, Chika ; Hagishima, Daisuke ; Uchida, Ken ; Numata, Toshinori. / Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors. In: Solid-State Electronics. 2013 ; Vol. 86. pp. 27-31.
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