Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Chika Tanaka, Daisuke Hagishima, Ken Uchida, Toshinori Numata

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.

    Original languageEnglish
    Pages (from-to)27-31
    Number of pages5
    JournalSolid-State Electronics
    Volume86
    DOIs
    Publication statusPublished - 2013 May 20

    Keywords

    • Analytical model
    • Silicon nanowire transistor
    • Threshold voltage

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors'. Together they form a unique fingerprint.

    Cite this