Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits

Ken Uchida, Kazuya Matsuzawa, Junji Koga, Ryuji Ohba, Shin Ichi Takagi, Akira Toriumi

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

In this work, we propose a compact, physically based, analytical single-electron transistor (SET) model suitable for the design and analysis of realistic SET circuits. The model is derived on the basis of the "orthodox" theory of correlated single-electron tunneling and the steady-state master equation method. The SET inverter characteristics are successfully calculated using the model implemented in the simulation program with integrated circuit emphasis (SPICE). The hybrid circuit of SETs with metal-oxide-semiconductor field-effect transistors (MOSFETs) is also successfully simulated. By utilizing the model, it is clarified that the drain-voltage-induced shift of the gate voltage dependence of SET current reaches one-half of the drain voltage in the case of a completely symmetric SET.

Original languageEnglish
Pages (from-to)2321-2324
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

transistor circuits
Single electron transistors
single electron transistors
Networks (circuits)
Electric potential
electric potential
hybrid circuits
Electron tunneling
MOSFET devices
electron tunneling
metal oxide semiconductors
integrated circuits
Integrated circuits
equations of state
field effect transistors
shift
simulation

Keywords

  • Circuit simulation
  • Coulomb blockade
  • Device modeling
  • Master equation
  • Orthodox theory
  • SET
  • Single-electron tunneling
  • SPICE

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits. / Uchida, Ken; Matsuzawa, Kazuya; Koga, Junji; Ohba, Ryuji; Takagi, Shin Ichi; Toriumi, Akira.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2321-2324.

Research output: Contribution to journalArticle

Uchida, Ken ; Matsuzawa, Kazuya ; Koga, Junji ; Ohba, Ryuji ; Takagi, Shin Ichi ; Toriumi, Akira. / Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2000 ; Vol. 39, No. 4 B. pp. 2321-2324.
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