Anion photoelectron spectroscopy of transition metal- and lanthanide metal-silicon clusters

M Sin- (n=6-20)

Kiichirou Koyasu, Junko Atobe, Shunsuke Furuse, Atsushi Nakajima

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

The electronic properties of silicon clusters containing a transition or lanthanide metal atom from group 3, 4, or 5, M Sin, (M=Sc, Ti, V, Y, Zr, Nb, Lu, Tb, Ho, Hf, and Ta) were investigated by anion photoelectron spectroscopy at 213 nm. In the case of the group 3 elements Sc, Y, Lu, Tb, and Ho, the threshold energy of electron detachment exhibits local maxima at n=10 and 16, while in case of the group 4 elements Ti, Zr, and Hf, the threshold energy exhibits a local minimum at n=16, associated with the presence of a small bump in the spectrum. These electronic characteristics of M Sin are closely related to a cooperative effect between their geometric and electronic structures, which is discussed, together with the results of experiments that probe their geometric stability via their reactivity to H2O adsorption, and with theoretical calculations.

Original languageEnglish
Article number214301
JournalJournal of Chemical Physics
Volume129
Issue number21
DOIs
Publication statusPublished - 2008

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Lanthanoid Series Elements
Silicon
Photoelectron spectroscopy
Electronic properties
Electronic structure
Transition metals
Anions
Metals
transition metals
photoelectron spectroscopy
anions
Adsorption
Atoms
Electrons
silicon
metals
thresholds
Experiments
electronics
detachment

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Anion photoelectron spectroscopy of transition metal- and lanthanide metal-silicon clusters : M Sin- (n=6-20). / Koyasu, Kiichirou; Atobe, Junko; Furuse, Shunsuke; Nakajima, Atsushi.

In: Journal of Chemical Physics, Vol. 129, No. 21, 214301, 2008.

Research output: Contribution to journalArticle

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