Anisotropic hole velocity overshoot in GaAs and Si

Y. Tagawa, Yuji Awano, N. Yokoyama

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate Full Band Monte Carlo simulations of the anisotropic transient hole transport in GaAs and Si for the first time. The simulation of transient hole transport in GaAs shows that under a constant electric field of 100 kV/cm, the maximum drift velocity reaches 2.2 × 107 cm/s at the room temperature, about 3 times higher than the steady-state saturation velocity. We calculated the direction dependence of the applied electric field on the hole overshoot phenomena and found that the peak velocity at the electric field applied along [100] is about 30% higher than in the case of [110], although the saturation velocities are almost the same. Simulations of Si hole transport showed a similar type of directional dependence.

Original languageEnglish
Pages (from-to)545-547
Number of pages3
JournalPhysica Status Solidi (B) Basic Research
Volume204
Issue number1
Publication statusPublished - 1997 Nov
Externally publishedYes

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Electric fields
electric fields
saturation
simulation
gallium arsenide
room temperature
Temperature
Direction compound
Monte Carlo simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Anisotropic hole velocity overshoot in GaAs and Si. / Tagawa, Y.; Awano, Yuji; Yokoyama, N.

In: Physica Status Solidi (B) Basic Research, Vol. 204, No. 1, 11.1997, p. 545-547.

Research output: Contribution to journalArticle

Tagawa, Y. ; Awano, Yuji ; Yokoyama, N. / Anisotropic hole velocity overshoot in GaAs and Si. In: Physica Status Solidi (B) Basic Research. 1997 ; Vol. 204, No. 1. pp. 545-547.
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