We investigate Full Band Monte Carlo simulations of the anisotropic transient hole transport in GaAs and Si for the first time. The simulation of transient hole transport in GaAs shows that under a constant electric field of 100 kV/cm, the maximum drift velocity reaches 2.2 × 107 cm/s at the room temperature, about 3 times higher than the steady-state saturation velocity. We calculated the direction dependence of the applied electric field on the hole overshoot phenomena and found that the peak velocity at the electric field applied along  is about 30% higher than in the case of , although the saturation velocities are almost the same. Simulations of Si hole transport showed a similar type of directional dependence.
|Number of pages||3|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 1997 Nov|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics