Annealing enhancement in stability and performance of copper modified boron-doped diamond (Cu-BDD) electrode for electrochemical nitrate reduction

Peijing Kuang, Keisuke Natsui, Yasuaki Einaga, Chuanping Feng, Yubo Cui, Wanjun Zhang, Yang Deng

Research output: Contribution to journalArticlepeer-review

Abstract

Nitrate contamination in groundwater requires efficient remediation to prevent adverse environmental impacts. This study illustrates the improvement in nitrate reduction process using copper modified BDD (Cu-BDD) with higher stability after annealing treatment. The highest values for nitrate reduction and the selectivity of nitrogen gas were about 71% and 45%, respectively, which were obtained using annealed Cu-BDD electrode. Annealing process promoted the homogeneity of copper oxides that consolidated the electrodeposited copper oxides on the surface of Cu-BDD to enhance the stability of electrode. Meanwhile, annealed Cu-BDD exhibited higher conductivity to facilitate nitrate reduction initiating at a more positive potential. Furthermore, cuprous ions and metallic Cu were formed during the annealing treatment, and had active chemical reaction with nitrate and excellent catalytic capability for the reaction, which efficiently enhanced either the nitrate reduction efficiency or the selectivity of nitrogen gas. The findings advance the current understanding on the enhancement of electrochemical stability and nitrate reduction performance using Cu-BDD after the annealing treatment, and also offer a promising technology for remediation of nitrate-contaminated groundwater.

Original languageEnglish
Article number108310
JournalDiamond and Related Materials
Volume114
DOIs
Publication statusPublished - 2021 Apr

Keywords

  • Annealing treatment
  • Copper modified boron doping diamond (Cu-BDD)
  • Mechanism
  • Nitrate reduction performance
  • Stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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