Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3

Naotoshi Kadotani, Tsunaki Takahashi, Kunro Chen, Tetsuo Kodera, Shunri Oda, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Carrier transport in heavily doped extremely thin silicon-on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility (μe) in heavily doped ETSOI diffusion layer is totally different from μe in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μe is enhanced, compared with μe in heavily doped bulk Si. This enhancement is caused by the reduced number of ions which interact with carriers in ETSOI. On the other hand, in ETSOI with SOI thickness of less than 2 nm μe is degraded, compared with μe in heavily doped bulk Si. The degradation is primary due to the scattering induced by SOI thickness fluctuations. μe in heavily doped ETSOI with SOI thickness of less than 2 nm is further decreased as doping concentration increases, which results from the enhanced potential fluctuations by Coulomb potentials made by randomly distributed ions.

    Original languageEnglish
    Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
    Pages3.3.1-3.3.4
    DOIs
    Publication statusPublished - 2010 Dec 1
    Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
    Duration: 2010 Dec 62010 Dec 8

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2010 IEEE International Electron Devices Meeting, IEDM 2010
    CountryUnited States
    CitySan Francisco, CA
    Period10/12/610/12/8

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Kadotani, N., Takahashi, T., Chen, K., Kodera, T., Oda, S., & Uchida, K. (2010). Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 3.3.1-3.3.4). [5703288] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703288