Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3

Naotoshi Kadotani, Tsunaki Takahashi, Kunro Chen, Tetsuo Kodera, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Carrier transport in heavily doped extremely thin silicon-on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility (μe) in heavily doped ETSOI diffusion layer is totally different from μe in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μe is enhanced, compared with μe in heavily doped bulk Si. This enhancement is caused by the reduced number of ions which interact with carriers in ETSOI. On the other hand, in ETSOI with SOI thickness of less than 2 nm μe is degraded, compared with μe in heavily doped bulk Si. The degradation is primary due to the scattering induced by SOI thickness fluctuations. μe in heavily doped ETSOI with SOI thickness of less than 2 nm is further decreased as doping concentration increases, which results from the enhanced potential fluctuations by Coulomb potentials made by randomly distributed ions.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

Fingerprint

Electron mobility
SOI (semiconductors)
electron mobility
Doping (additives)
Ions
Carrier transport
Silicon
Scattering
Degradation
Coulomb potential
ions
insulators
degradation
augmentation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kadotani, N., Takahashi, T., Chen, K., Kodera, T., Oda, S., & Uchida, K. (2010). Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3. In Technical Digest - International Electron Devices Meeting, IEDM [5703288] https://doi.org/10.1109/IEDM.2010.5703288

Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3. / Kadotani, Naotoshi; Takahashi, Tsunaki; Chen, Kunro; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken.

Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703288.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kadotani, N, Takahashi, T, Chen, K, Kodera, T, Oda, S & Uchida, K 2010, Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3. in Technical Digest - International Electron Devices Meeting, IEDM., 5703288, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703288
Kadotani N, Takahashi T, Chen K, Kodera T, Oda S, Uchida K. Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3. In Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703288 https://doi.org/10.1109/IEDM.2010.5703288
Kadotani, Naotoshi ; Takahashi, Tsunaki ; Chen, Kunro ; Kodera, Tetsuo ; Oda, Shunri ; Uchida, Ken. / Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3. Technical Digest - International Electron Devices Meeting, IEDM. 2010.
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abstract = "Carrier transport in heavily doped extremely thin silicon-on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility (μe) in heavily doped ETSOI diffusion layer is totally different from μe in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μe is enhanced, compared with μe in heavily doped bulk Si. This enhancement is caused by the reduced number of ions which interact with carriers in ETSOI. On the other hand, in ETSOI with SOI thickness of less than 2 nm μe is degraded, compared with μe in heavily doped bulk Si. The degradation is primary due to the scattering induced by SOI thickness fluctuations. μe in heavily doped ETSOI with SOI thickness of less than 2 nm is further decreased as doping concentration increases, which results from the enhanced potential fluctuations by Coulomb potentials made by randomly distributed ions.",
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