Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3

Naotoshi Kadotani; Tsunaki Takahashi; Kunro Chen; Tetsuo Kodera; Shunri Oda; Ken Uchida

doi:10.1109/IEDM.2010.5703288

Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10¹⁸cm^-3

Naotoshi Kadotani, Tsunaki Takahashi, Kunro Chen, Tetsuo Kodera, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Carrier transport in heavily doped extremely thin silicon-on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility (μ_e) in heavily doped ETSOI diffusion layer is totally different from μ_e in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μ_e is enhanced, compared with μ_e in heavily doped bulk Si. This enhancement is caused by the reduced number of ions which interact with carriers in ETSOI. On the other hand, in ETSOI with SOI thickness of less than 2 nm μ_e is degraded, compared with μ_e in heavily doped bulk Si. The degradation is primary due to the scattering induced by SOI thickness fluctuations. μ_e in heavily doped ETSOI with SOI thickness of less than 2 nm is further decreased as doping concentration increases, which results from the enhanced potential fluctuations by Coulomb potentials made by randomly distributed ions.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	3.3.1-3.3.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703288
Publication status	Published - 2010 Dec 1
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2010.5703288

Cite this

Kadotani, N., Takahashi, T., Chen, K., Kodera, T., Oda, S., & Uchida, K. (2010). Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10¹⁸cm^-3. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 3.3.1-3.3.4). [5703288] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703288

Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10¹⁸cm^-3. / Kadotani, Naotoshi; Takahashi, Tsunaki; Chen, Kunro et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 3.3.1-3.3.4 5703288 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kadotani, N, Takahashi, T, Chen, K, Kodera, T, Oda, S & Uchida, K 2010, Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10¹⁸cm^-3. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703288, Technical Digest - International Electron Devices Meeting, IEDM, pp. 3.3.1-3.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703288

Kadotani N, Takahashi T, Chen K, Kodera T, Oda S, Uchida K. Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10¹⁸cm^-3. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 3.3.1-3.3.4. 5703288. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2010.5703288

Kadotani, Naotoshi ; Takahashi, Tsunaki ; Chen, Kunro et al. / Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10¹⁸cm^-3. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. pp. 3.3.1-3.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "Carrier transport in heavily doped extremely thin silicon-on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility (μe) in heavily doped ETSOI diffusion layer is totally different from μe in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μe is enhanced, compared with μe in heavily doped bulk Si. This enhancement is caused by the reduced number of ions which interact with carriers in ETSOI. On the other hand, in ETSOI with SOI thickness of less than 2 nm μe is degraded, compared with μe in heavily doped bulk Si. The degradation is primary due to the scattering induced by SOI thickness fluctuations. μe in heavily doped ETSOI with SOI thickness of less than 2 nm is further decreased as doping concentration increases, which results from the enhanced potential fluctuations by Coulomb potentials made by randomly distributed ions.",

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