Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

K. W. Chan, W. Huang, C. H. Yang, J. C.C. Hwang, B. Hensen, T. Tanttu, F. E. Hudson, Kohei M Itoh, A. Laucht, A. Morello, A. S. Dzurak

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Abstract

Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large-scale quantum-computer implementations. Noise coupled in from the environment is the main factor contributing to decoherence but can be mitigated via engineering design and control solutions. However, this is possible only after acquisition of a thorough understanding of the dominant noise sources and their spectrum. In the work reported here, we use a silicon quantum dot spin qubit as a metrological device to study the noise environment experienced by the qubit. We compare the sensitivity of this qubit to electrical noise with that of an implanted silicon-donor qubit in the same environment and measurement setup. Our results show that, as expected, a quantum dot spin qubit is more sensitive to electrical noise than a donor spin qubit due to the larger Stark shift, and the noise-spectroscopy data show pronounced charge-noise contributions at intermediate frequencies (2-20 kHz).

Original languageEnglish
Article number044017
JournalPhysical Review Applied
Volume10
Issue number4
DOIs
Publication statusPublished - 2018 Oct 5

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chan, K. W., Huang, W., Yang, C. H., Hwang, J. C. C., Hensen, B., Tanttu, T., Hudson, F. E., Itoh, K. M., Laucht, A., Morello, A., & Dzurak, A. S. (2018). Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy. Physical Review Applied, 10(4), [044017]. https://doi.org/10.1103/PhysRevApplied.10.044017