Asymmetric current-phase relation due to spin-orbit interaction in semiconductor nanowire Josephson junction

Tomohiro Yokoyama, Mikio Eto, Yuli V. Nazarov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the Josephson current I and phase difference φ between the superconductors satisfy the relation of I(φ) = -I(-φ). In the presence of magnetic field along the nanowire, the interplay between the SO interaction and Zeeman effect breaks the current-phase relation of I(φ) = -I(-φ). In this case, we show that the critical current depends on the current direction, which qualitatively agrees with recent experimental findings.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages423-424
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • Andreev bound state
  • Josephson junction
  • semiconductor nanowire
  • spin-orbit interaction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yokoyama, T., Eto, M., & Nazarov, Y. V. (2013). Asymmetric current-phase relation due to spin-orbit interaction in semiconductor nanowire Josephson junction. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 423-424). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848466