Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution

Yasuo Shimizu, Yoko Kawamura, Masashi Uematsu, Kohei M Itoh, Mitsuhiro Tomita, Mikio Sasaki, Hiroshi Uchida, Mamoru Takahashi

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Laser-assisted atom probe microscopy of 2 nm period Si28 / Si30isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

Original languageEnglish
Article number076102
JournalJournal of Applied Physics
Volume106
Issue number7
DOIs
Publication statusPublished - 2009

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silicon isotopes
secondary ion mass spectrometry
superlattices
spatial resolution
microscopy
probes
isotopes
atoms
artifacts
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution. / Shimizu, Yasuo; Kawamura, Yoko; Uematsu, Masashi; Itoh, Kohei M; Tomita, Mitsuhiro; Sasaki, Mikio; Uchida, Hiroshi; Takahashi, Mamoru.

In: Journal of Applied Physics, Vol. 106, No. 7, 076102, 2009.

Research output: Contribution to journalArticle

Shimizu, Yasuo ; Kawamura, Yoko ; Uematsu, Masashi ; Itoh, Kohei M ; Tomita, Mitsuhiro ; Sasaki, Mikio ; Uchida, Hiroshi ; Takahashi, Mamoru. / Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution. In: Journal of Applied Physics. 2009 ; Vol. 106, No. 7.
@article{3b571f7f670d48e7a16f4e58f5a3acab,
title = "Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution",
abstract = "Laser-assisted atom probe microscopy of 2 nm period Si28 / Si30isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.",
author = "Yasuo Shimizu and Yoko Kawamura and Masashi Uematsu and Itoh, {Kohei M} and Mitsuhiro Tomita and Mikio Sasaki and Hiroshi Uchida and Mamoru Takahashi",
year = "2009",
doi = "10.1063/1.3236673",
language = "English",
volume = "106",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution

AU - Shimizu, Yasuo

AU - Kawamura, Yoko

AU - Uematsu, Masashi

AU - Itoh, Kohei M

AU - Tomita, Mitsuhiro

AU - Sasaki, Mikio

AU - Uchida, Hiroshi

AU - Takahashi, Mamoru

PY - 2009

Y1 - 2009

N2 - Laser-assisted atom probe microscopy of 2 nm period Si28 / Si30isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

AB - Laser-assisted atom probe microscopy of 2 nm period Si28 / Si30isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

UR - http://www.scopus.com/inward/record.url?scp=70350113660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350113660&partnerID=8YFLogxK

U2 - 10.1063/1.3236673

DO - 10.1063/1.3236673

M3 - Article

AN - SCOPUS:70350113660

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 076102

ER -