Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography

Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, Kohei M Itoh, Y. Nagai

Research output: Contribution to journalArticle

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Abstract

We report comparison of the interfacial sharpness characterization of germanium (Ge) isotopic multilayers between laser-assisted atom probe tomography (APT) and secondary ion mass spectrometry (SIMS). An alternating stack of 8-nm-thick naturally available Ge layers and 8-nm-thick isotopically enriched 70Ge layers was prepared on a Ge(100) substrate by molecular beam epitaxy. The APT mass spectra consist of clearly resolved peaks of five stable Ge isotopes (70Ge, 72Ge, 73Ge, 74Ge, and 76Ge). The degree of intermixing at the interfaces between adjacent layers was determined by APT to be around 0.8 ± 0.1 nm which was much sharper than that obtained by SIMS.

Original languageEnglish
Article number026101
JournalJournal of Applied Physics
Volume113
Issue number2
DOIs
Publication statusPublished - 2013 Jan 14

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germanium
tomography
secondary ion mass spectrometry
probes
germanium isotopes
atoms
sharpness
mass spectra
molecular beam epitaxy
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Shimizu, Y., Takamizawa, H., Kawamura, Y., Uematsu, M., Toyama, T., Inoue, K., ... Nagai, Y. (2013). Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography. Journal of Applied Physics, 113(2), [026101]. https://doi.org/10.1063/1.4773675

Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography. / Shimizu, Y.; Takamizawa, H.; Kawamura, Y.; Uematsu, M.; Toyama, T.; Inoue, K.; Haller, E. E.; Itoh, Kohei M; Nagai, Y.

In: Journal of Applied Physics, Vol. 113, No. 2, 026101, 14.01.2013.

Research output: Contribution to journalArticle

Shimizu, Y, Takamizawa, H, Kawamura, Y, Uematsu, M, Toyama, T, Inoue, K, Haller, EE, Itoh, KM & Nagai, Y 2013, 'Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography', Journal of Applied Physics, vol. 113, no. 2, 026101. https://doi.org/10.1063/1.4773675
Shimizu Y, Takamizawa H, Kawamura Y, Uematsu M, Toyama T, Inoue K et al. Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography. Journal of Applied Physics. 2013 Jan 14;113(2). 026101. https://doi.org/10.1063/1.4773675
Shimizu, Y. ; Takamizawa, H. ; Kawamura, Y. ; Uematsu, M. ; Toyama, T. ; Inoue, K. ; Haller, E. E. ; Itoh, Kohei M ; Nagai, Y. / Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 2.
@article{6c8e23c9d17248c1aa5f3b96cb3023ec,
title = "Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography",
abstract = "We report comparison of the interfacial sharpness characterization of germanium (Ge) isotopic multilayers between laser-assisted atom probe tomography (APT) and secondary ion mass spectrometry (SIMS). An alternating stack of 8-nm-thick naturally available Ge layers and 8-nm-thick isotopically enriched 70Ge layers was prepared on a Ge(100) substrate by molecular beam epitaxy. The APT mass spectra consist of clearly resolved peaks of five stable Ge isotopes (70Ge, 72Ge, 73Ge, 74Ge, and 76Ge). The degree of intermixing at the interfaces between adjacent layers was determined by APT to be around 0.8 ± 0.1 nm which was much sharper than that obtained by SIMS.",
author = "Y. Shimizu and H. Takamizawa and Y. Kawamura and M. Uematsu and T. Toyama and K. Inoue and Haller, {E. E.} and Itoh, {Kohei M} and Y. Nagai",
year = "2013",
month = "1",
day = "14",
doi = "10.1063/1.4773675",
language = "English",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography

AU - Shimizu, Y.

AU - Takamizawa, H.

AU - Kawamura, Y.

AU - Uematsu, M.

AU - Toyama, T.

AU - Inoue, K.

AU - Haller, E. E.

AU - Itoh, Kohei M

AU - Nagai, Y.

PY - 2013/1/14

Y1 - 2013/1/14

N2 - We report comparison of the interfacial sharpness characterization of germanium (Ge) isotopic multilayers between laser-assisted atom probe tomography (APT) and secondary ion mass spectrometry (SIMS). An alternating stack of 8-nm-thick naturally available Ge layers and 8-nm-thick isotopically enriched 70Ge layers was prepared on a Ge(100) substrate by molecular beam epitaxy. The APT mass spectra consist of clearly resolved peaks of five stable Ge isotopes (70Ge, 72Ge, 73Ge, 74Ge, and 76Ge). The degree of intermixing at the interfaces between adjacent layers was determined by APT to be around 0.8 ± 0.1 nm which was much sharper than that obtained by SIMS.

AB - We report comparison of the interfacial sharpness characterization of germanium (Ge) isotopic multilayers between laser-assisted atom probe tomography (APT) and secondary ion mass spectrometry (SIMS). An alternating stack of 8-nm-thick naturally available Ge layers and 8-nm-thick isotopically enriched 70Ge layers was prepared on a Ge(100) substrate by molecular beam epitaxy. The APT mass spectra consist of clearly resolved peaks of five stable Ge isotopes (70Ge, 72Ge, 73Ge, 74Ge, and 76Ge). The degree of intermixing at the interfaces between adjacent layers was determined by APT to be around 0.8 ± 0.1 nm which was much sharper than that obtained by SIMS.

UR - http://www.scopus.com/inward/record.url?scp=84872708282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872708282&partnerID=8YFLogxK

U2 - 10.1063/1.4773675

DO - 10.1063/1.4773675

M3 - Article

AN - SCOPUS:84872708282

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 026101

ER -