Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at a p-type GaAs(110) surface

Hiroshi Imada, Kuniyuki Miwa, Jaehoon Jung, Tomoko Shimizu, Naoki Yamamoto, Yousoo Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Luminescence of p-type GaAs was induced by electron injection from the tip of a scanning tunnelling microscope into a GaAs(110) surface. Atomically-resolved photon maps revealed a significant reduction in luminescence intensity at surface electronic states localized near Ga atoms. Theoretical analysis based on first principles calculations and a rate equation approach was performed to describe the perspective of electron energy dissipation at the surface. Our study reveals that non-radiative recombination through the surface states (SS) is a dominant process for the electron energy dissipation at the surface, which is suggestive of the fast scattering of injected electrons into the SS.

Original languageEnglish
Article number365402
JournalNanotechnology
Volume26
Issue number36
DOIs
Publication statusPublished - 2015 Sep 11
Externally publishedYes

Fingerprint

Luminescence
Energy dissipation
Electrons
Surface states
Electron injection
Electronic states
Microscopes
Photons
Scattering
Scanning
Atoms
gallium arsenide

Keywords

  • energy dissipation
  • GaAs(110) surface
  • luminescence
  • scanning tunnelling microscope
  • surface electronic states

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at a p-type GaAs(110) surface. / Imada, Hiroshi; Miwa, Kuniyuki; Jung, Jaehoon; Shimizu, Tomoko; Yamamoto, Naoki; Kim, Yousoo.

In: Nanotechnology, Vol. 26, No. 36, 365402, 11.09.2015.

Research output: Contribution to journalArticle

Imada, Hiroshi ; Miwa, Kuniyuki ; Jung, Jaehoon ; Shimizu, Tomoko ; Yamamoto, Naoki ; Kim, Yousoo. / Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at a p-type GaAs(110) surface. In: Nanotechnology. 2015 ; Vol. 26, No. 36.
@article{f372a050db1f46dc9d71c735d32f8bec,
title = "Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at a p-type GaAs(110) surface",
abstract = "Luminescence of p-type GaAs was induced by electron injection from the tip of a scanning tunnelling microscope into a GaAs(110) surface. Atomically-resolved photon maps revealed a significant reduction in luminescence intensity at surface electronic states localized near Ga atoms. Theoretical analysis based on first principles calculations and a rate equation approach was performed to describe the perspective of electron energy dissipation at the surface. Our study reveals that non-radiative recombination through the surface states (SS) is a dominant process for the electron energy dissipation at the surface, which is suggestive of the fast scattering of injected electrons into the SS.",
keywords = "energy dissipation, GaAs(110) surface, luminescence, scanning tunnelling microscope, surface electronic states",
author = "Hiroshi Imada and Kuniyuki Miwa and Jaehoon Jung and Tomoko Shimizu and Naoki Yamamoto and Yousoo Kim",
year = "2015",
month = "9",
day = "11",
doi = "10.1088/0957-4484/26/36/365402",
language = "English",
volume = "26",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "36",

}

TY - JOUR

T1 - Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at a p-type GaAs(110) surface

AU - Imada, Hiroshi

AU - Miwa, Kuniyuki

AU - Jung, Jaehoon

AU - Shimizu, Tomoko

AU - Yamamoto, Naoki

AU - Kim, Yousoo

PY - 2015/9/11

Y1 - 2015/9/11

N2 - Luminescence of p-type GaAs was induced by electron injection from the tip of a scanning tunnelling microscope into a GaAs(110) surface. Atomically-resolved photon maps revealed a significant reduction in luminescence intensity at surface electronic states localized near Ga atoms. Theoretical analysis based on first principles calculations and a rate equation approach was performed to describe the perspective of electron energy dissipation at the surface. Our study reveals that non-radiative recombination through the surface states (SS) is a dominant process for the electron energy dissipation at the surface, which is suggestive of the fast scattering of injected electrons into the SS.

AB - Luminescence of p-type GaAs was induced by electron injection from the tip of a scanning tunnelling microscope into a GaAs(110) surface. Atomically-resolved photon maps revealed a significant reduction in luminescence intensity at surface electronic states localized near Ga atoms. Theoretical analysis based on first principles calculations and a rate equation approach was performed to describe the perspective of electron energy dissipation at the surface. Our study reveals that non-radiative recombination through the surface states (SS) is a dominant process for the electron energy dissipation at the surface, which is suggestive of the fast scattering of injected electrons into the SS.

KW - energy dissipation

KW - GaAs(110) surface

KW - luminescence

KW - scanning tunnelling microscope

KW - surface electronic states

UR - http://www.scopus.com/inward/record.url?scp=84940100249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940100249&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/26/36/365402

DO - 10.1088/0957-4484/26/36/365402

M3 - Article

AN - SCOPUS:84940100249

VL - 26

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 36

M1 - 365402

ER -