Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Masanobu Miyao, Yuichiro Ando, Koji Ueda, Kohei Hamaya, Yukio Nozaki, Taizoh Sadoh, Kimihide Matsuyama, Kazumasa Narumi, Yoshihito Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages688-691
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08/10/2008/10/23

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Miyao, M., Ando, Y., Ueda, K., Hamaya, K., Nozaki, Y., Sadoh, T., Matsuyama, K., Narumi, K., & Maeda, Y. (2008). Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 688-691). [4734647] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734647