Abstract
We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.
Original language | English |
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Article number | 031903 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2005 Jul 18 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)