Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

S. Yoshida; T. Sekiguchi; K. M. Itoh

doi:10.1063/1.1995946

Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

S. Yoshida, T. Sekiguchi, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.

Original language	English
Article number	031903
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1995946
Publication status	Published - 2005 Jul 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1995946

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abstract = "We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.",

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note = "Funding Information: We would like to acknowledge H. Tochihara, S. Hasegawa, and I. Matsuda for fruitful discussions, and J. Lue and E. E. Haller for helpful discussions and reviewing. This work is supported in part by a Grant-in-Aid for Scientific Research in a Priority Area “Semiconductor Nanospintronics” Grant No. 14076215. ",

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Y1 - 2005/7/18

N2 - We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.

AB - We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.

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Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

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