Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

S. Yoshida; T. Sekiguchi; K. M. Itoh

doi:10.1063/1.1995946

Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

S. Yoshida, T. Sekiguchi, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article

25 Citations (Scopus)

Abstract

We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.

Original language	English
Article number	031903
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1995946
Publication status	Published - 2005 Jul 18

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Yoshida, S., Sekiguchi, T., & Itoh, K. M. (2005). Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction. Applied Physics Letters, 87(3), [031903]. https://doi.org/10.1063/1.1995946

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10.1063/1.1995946