Abstract
We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.
| Original language | English |
|---|---|
| Article number | 031903 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2005 Jul 18 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction'. Together they form a unique fingerprint.
Cite this
Yoshida, S., Sekiguchi, T., & Itoh, K. M. (2005). Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction. Applied Physics Letters, 87(3), [031903]. https://doi.org/10.1063/1.1995946