Atomistic study of the morphology of graphene on Si and SiC substrates

S. Seto, N. Arai, K. Shintani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The morphology of graphene on Si and SiC substrates is investigated using molecular-dynamics simulation. The effects of the size and orientation of graphene on its roughness, distance from the substrate, and periodic structure are examined. The roughness and distance show the size dependency which agrees with the size dependency of the ratio of the periphery length of graphene to its area. It is found there are some cases in which the roughness of graphene can be suppressed.

Original languageEnglish
Title of host publicationCarbon Nanotubes, Graphene and Related Nanostructures
Pages91-96
Number of pages6
DOIs
Publication statusPublished - 2012 Dec 5
Externally publishedYes
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: 2011 Nov 282011 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1407
ISSN (Print)0272-9172

Conference

Conference2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/11/2811/12/2

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Seto, S., Arai, N., & Shintani, K. (2012). Atomistic study of the morphology of graphene on Si and SiC substrates. In Carbon Nanotubes, Graphene and Related Nanostructures (pp. 91-96). (Materials Research Society Symposium Proceedings; Vol. 1407). https://doi.org/10.1557/opl.2012.334