Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy

Akimasa Yamada, Yunosuke Makita, Shigeru Niki, Akira Obara, Paul Fons, Hajime Shibata, Michihiro Kawai, Shigefusa Chichibu, Hisayuki Nakanishi

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Abstract

Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71 eV at low temperature, which is attributed to recombination of free excitons and bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2 and 3.3 meV, respectively. The band-gap energy Eg is estimated to be 1.7310 eV at low temperature. It is suggested that the temperature variation of Eg is dominated by interaction with phonons of 26 meV which corresponds to the mean energy of the optical phonons in CuGaSe2.

Original languageEnglish
Pages (from-to)4318-4322
Number of pages5
JournalJournal of Applied Physics
Volume79
Issue number8
DOIs
Publication statusPublished - 1996 Apr 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamada, A., Makita, Y., Niki, S., Obara, A., Fons, P., Shibata, H., Kawai, M., Chichibu, S., & Nakanishi, H. (1996). Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy. Journal of Applied Physics, 79(8), 4318-4322. https://doi.org/10.1063/1.361800