Band-gap expansion of tungsten oxide quantum dots synthesized in sub-nano porous silica

Hiroto Watanabe, Kenji Fujikata, Yuya Oaki, Hiroaki Imai

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The band-gap energy tuning of WO3 quantum dots was realized in the range of 2.6 eV (bulk) to 3.7 eV (sub-nano) by precise size control around one nanometer. Newly synthesized sub-nanoporous silicas act as excellent templates. In addition, single-electron reduction of oxygen under UV irradiation is now achievable with WO3.

Original languageEnglish
Pages (from-to)8477-8479
Number of pages3
JournalChemical Communications
Volume49
Issue number76
DOIs
Publication statusPublished - 2013 Oct 4

Fingerprint

Silicon Dioxide
Semiconductor quantum dots
Tungsten
Energy gap
Tuning
Silica
Irradiation
Oxygen
Oxides
Electrons
tungsten oxide

ASJC Scopus subject areas

  • Metals and Alloys
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Catalysis
  • Chemistry(all)

Cite this

Band-gap expansion of tungsten oxide quantum dots synthesized in sub-nano porous silica. / Watanabe, Hiroto; Fujikata, Kenji; Oaki, Yuya; Imai, Hiroaki.

In: Chemical Communications, Vol. 49, No. 76, 04.10.2013, p. 8477-8479.

Research output: Contribution to journalArticle

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