Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

K. Matsubara, H. Tampo, H. Shibata, A. Yamada, P. Fons, K. Iwata, S. Niki

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130 Citations (Scopus)


Al-doped Zn1-xMgxO films were deposited on glass substrates at a temperature of 200°C using pulsed laser deposition (PLD) technique. The increase in Mg composition further increased the film resistivity. The energy dispersive x-ray spectroscopy (EDX) with electron acceleration voltage of 15 kV was used to measure the chemical composition of each film. The results of the preliminary study suggests that an increase in the electron effective mass occurs upon alloying of ZnO with MgO.

Original languageEnglish
Pages (from-to)1374-1376
Number of pages3
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2004 Aug 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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