Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

K. Matsubara; H. Tampo; H. Shibata; A. Yamada; P. Fons; K. Iwata; S. Niki

doi:10.1063/1.1784544

Band-gap modified Al-doped Zn_1-xMg_xO transparent conducting films deposited by pulsed laser deposition

K. Matsubara, H. Tampo, H. Shibata, A. Yamada, P. Fons, K. Iwata, S. Niki

Research output: Contribution to journal › Article › peer-review

138 Citations (Scopus)

Abstract

Al-doped Zn_1-xMg_xO films were deposited on glass substrates at a temperature of 200°C using pulsed laser deposition (PLD) technique. The increase in Mg composition further increased the film resistivity. The energy dispersive x-ray spectroscopy (EDX) with electron acceleration voltage of 15 kV was used to measure the chemical composition of each film. The results of the preliminary study suggests that an increase in the electron effective mass occurs upon alloying of ZnO with MgO.

Original language	English
Pages (from-to)	1374-1376
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	8
DOIs	https://doi.org/10.1063/1.1784544
Publication status	Published - 2004 Aug 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1784544

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abstract = "Al-doped Zn1-xMgxO films were deposited on glass substrates at a temperature of 200°C using pulsed laser deposition (PLD) technique. The increase in Mg composition further increased the film resistivity. The energy dispersive x-ray spectroscopy (EDX) with electron acceleration voltage of 15 kV was used to measure the chemical composition of each film. The results of the preliminary study suggests that an increase in the electron effective mass occurs upon alloying of ZnO with MgO.",

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AU - Matsubara, K.

AU - Tampo, H.

AU - Shibata, H.

AU - Yamada, A.

AU - Fons, P.

AU - Iwata, K.

AU - Niki, S.

PY - 2004/8/23

Y1 - 2004/8/23

N2 - Al-doped Zn1-xMgxO films were deposited on glass substrates at a temperature of 200°C using pulsed laser deposition (PLD) technique. The increase in Mg composition further increased the film resistivity. The energy dispersive x-ray spectroscopy (EDX) with electron acceleration voltage of 15 kV was used to measure the chemical composition of each film. The results of the preliminary study suggests that an increase in the electron effective mass occurs upon alloying of ZnO with MgO.

AB - Al-doped Zn1-xMgxO films were deposited on glass substrates at a temperature of 200°C using pulsed laser deposition (PLD) technique. The increase in Mg composition further increased the film resistivity. The energy dispersive x-ray spectroscopy (EDX) with electron acceleration voltage of 15 kV was used to measure the chemical composition of each film. The results of the preliminary study suggests that an increase in the electron effective mass occurs upon alloying of ZnO with MgO.

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Band-gap modified Al-doped Zn_1-xMg_xO transparent conducting films deposited by pulsed laser deposition

Abstract

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