Band gap narrowing and electron doping by potassium encapsulation into single-walled carbon nanotubes

Hideyuki Maki, Satoru Suzuki, Tetsuya Sato, Koji Ishibashi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have fabricated field-effect transistors (FETs) with pristine and potassium-encapsulated single-walled carbon nanotube (SWNT) films, and the effects of potassium encapsulation are investigated. The transformation from a unipolar characteristic to an ambipolar characteristic by potassium encapsulation is observed from the measurement of the gate voltage dependence (Vgs) of the current (I) for SWNT-film FETs. This result indicates that the potassium encapsulation into SWNTs causes band gap narrowing. In addition, the n-type region of the I-Vgs, curve is expanded during annealing of the devices; electron transfer from potassium to SWNTs occurs owing to the removal of the adsorbates. The adsorbate removal is confirmed by photoemission spectroscopy measurement. The FET with an individual potassium-encapsulated SWNT shows an ambipolar characteristic.

Original languageEnglish
Pages (from-to)2486-2489
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • Ambipolar transport
  • Band gap
  • Carbon nanotube
  • Electron doping
  • Field-effect transistor
  • Film
  • Potassium
  • Work function

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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