Bandgap engineering of ZnO transparent conducting films

K. Matsubara, H. Tampo, A. Yamada, P. Fons, K. Iwata, K. Sakurai, S. Niki

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume763
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States
Duration: 2003 Apr 222003 Apr 25

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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