Bandgap engineering of ZnO using Se

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, S. Niki

Research output: Contribution to journalArticle

28 Citations (Scopus)


We have grown the compound semiconductor ZnO1-xSex by MBE. A decrease in bandgap energy with increasing Se composition x was observed and a large bowing parameter of 12.7 ± 1.6 eV was measured. This indicates the possibility of bandgap bowing in the ZnO1-xSex compound system and may open up new bandgap control techniques that allow bandgap changes to be made with small lattice mismatch.

Original languageEnglish
Pages (from-to)887-890
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number2
Publication statusPublished - 2002 Aug 14
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Iwata, K., Fons, P., Yamada, A., Shibata, H., Matsubara, K., Nakahara, K., Takasu, H., & Niki, S. (2002). Bandgap engineering of ZnO using Se. Physica Status Solidi (B) Basic Research, 229(2), 887-890.<887::AID-PSSB887>3.0.CO;2-G