Bandgap engineering of ZnO using Se

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, S. Niki

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

We have grown the compound semiconductor ZnO1-xSex by MBE. A decrease in bandgap energy with increasing Se composition x was observed and a large bowing parameter of 12.7 ± 1.6 eV was measured. This indicates the possibility of bandgap bowing in the ZnO1-xSex compound system and may open up new bandgap control techniques that allow bandgap changes to be made with small lattice mismatch.

Original languageEnglish
Pages (from-to)887-890
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number2
DOIs
Publication statusPublished - 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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