(Ba,Sr)TiO3 solid solution thin-films grown by a molecular beam epitaxy method

Tetsuo Kawano; Tetsuhiko Isobe; Mamoru Senna; Takaharu Nishihara; Junzo Tanaka

doi:10.1016/S0040-6090(99)00326-0

(Ba,Sr)TiO₃ solid solution thin-films grown by a molecular beam epitaxy method

Tetsuo Kawano, Tetsuhiko Isobe, Mamoru Senna, Takaharu Nishihara, Junzo Tanaka

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

(Ba,Sr)TiO₃ thin films were prepared on SrTiO₃ (001) substrates by a molecular beam epitaxy technique. (Ba,Sr)O and TiO₂ monolayers were alternately grown in twenty cycles to produce films of 8 nm thick. The growth mechanism of the films was elucidated from reflection high energy electron diffraction and atomic force microscopy. An island growth mechanism was found to be predominant, and activation energies for the surface migration of Sr/Ba and Ti were determined to be 0.31 and 0.33 eV, respectively. According to coaxial impact collision ion scattering spectroscopy measurements, the atomic configuration of the film surface improved when the ratio Sr/Ba increased from Ba_0.514Sr_0.486TiO_3.56 to Ba_0.304Sr_0.696TiO_3.50.

Original language	English
Pages (from-to)	57-61
Number of pages	5
Journal	Thin Solid Films
Volume	352
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(99)00326-0
Publication status	Published - 1999 Sept 8

Keywords

Molecular beam epitaxy (MBE), (Ba,Sr)TiO
Reflection high energy electron diffraction (RHEED)
Surface migration
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(99)00326-0

Cite this

@article{24f50c6f204948608968f8a761e500a4,

title = "(Ba,Sr)TiO3 solid solution thin-films grown by a molecular beam epitaxy method",

abstract = "(Ba,Sr)TiO3 thin films were prepared on SrTiO3 (001) substrates by a molecular beam epitaxy technique. (Ba,Sr)O and TiO2 monolayers were alternately grown in twenty cycles to produce films of 8 nm thick. The growth mechanism of the films was elucidated from reflection high energy electron diffraction and atomic force microscopy. An island growth mechanism was found to be predominant, and activation energies for the surface migration of Sr/Ba and Ti were determined to be 0.31 and 0.33 eV, respectively. According to coaxial impact collision ion scattering spectroscopy measurements, the atomic configuration of the film surface improved when the ratio Sr/Ba increased from Ba0.514Sr0.486TiO3.56 to Ba0.304Sr0.696TiO3.50.",

keywords = "Molecular beam epitaxy (MBE), (Ba,Sr)TiO, Reflection high energy electron diffraction (RHEED), Surface migration, Thin film",

author = "Tetsuo Kawano and Tetsuhiko Isobe and Mamoru Senna and Takaharu Nishihara and Junzo Tanaka",

year = "1999",

month = sep,

day = "8",

doi = "10.1016/S0040-6090(99)00326-0",

language = "English",

volume = "352",

pages = "57--61",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - (Ba,Sr)TiO3 solid solution thin-films grown by a molecular beam epitaxy method

AU - Kawano, Tetsuo

AU - Isobe, Tetsuhiko

AU - Senna, Mamoru

AU - Nishihara, Takaharu

AU - Tanaka, Junzo

PY - 1999/9/8

Y1 - 1999/9/8

N2 - (Ba,Sr)TiO3 thin films were prepared on SrTiO3 (001) substrates by a molecular beam epitaxy technique. (Ba,Sr)O and TiO2 monolayers were alternately grown in twenty cycles to produce films of 8 nm thick. The growth mechanism of the films was elucidated from reflection high energy electron diffraction and atomic force microscopy. An island growth mechanism was found to be predominant, and activation energies for the surface migration of Sr/Ba and Ti were determined to be 0.31 and 0.33 eV, respectively. According to coaxial impact collision ion scattering spectroscopy measurements, the atomic configuration of the film surface improved when the ratio Sr/Ba increased from Ba0.514Sr0.486TiO3.56 to Ba0.304Sr0.696TiO3.50.

AB - (Ba,Sr)TiO3 thin films were prepared on SrTiO3 (001) substrates by a molecular beam epitaxy technique. (Ba,Sr)O and TiO2 monolayers were alternately grown in twenty cycles to produce films of 8 nm thick. The growth mechanism of the films was elucidated from reflection high energy electron diffraction and atomic force microscopy. An island growth mechanism was found to be predominant, and activation energies for the surface migration of Sr/Ba and Ti were determined to be 0.31 and 0.33 eV, respectively. According to coaxial impact collision ion scattering spectroscopy measurements, the atomic configuration of the film surface improved when the ratio Sr/Ba increased from Ba0.514Sr0.486TiO3.56 to Ba0.304Sr0.696TiO3.50.

KW - Molecular beam epitaxy (MBE), (Ba,Sr)TiO

KW - Reflection high energy electron diffraction (RHEED)

KW - Surface migration

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=0004214015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004214015&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00326-0

DO - 10.1016/S0040-6090(99)00326-0

M3 - Article

AN - SCOPUS:0004214015

SN - 0040-6090

VL - 352

SP - 57

EP - 61

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -