Behavior of silicon and germanium clusters on a C60 fullerene

M. Ohara, Y. Nakamura, Y. Negishi, K. Miyajima, Atsushi Nakajima, K. Kaya

Research output: Contribution to journalArticle

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Abstract

Behavior of silicon (Si) and germanium (Ge) atoms (or clusters) on the surface of a C60 fullerene has been revealed by using time-of-flight mass spectroscopy and photoelectron spectroscopy. The mixed clusters of C60Sin and C60Gem were generated by two-lasers vaporization of a molded C60 rod and a Si (or a Ge) rod in He carrier gas. The size distributions of anionic and cationic C60Sin/C60Gem clusters monotonically decreased with the number of Si/Ge atoms, and were limited only up to n = 4 and m = 3. The photoelectron spectra of C60Sin- and C60Gem- are similar to that of pure C60- at m = 3, 4, whereas the spectra at n, m = 1, 2 are different from that of C60-. These results show that Si/Ge atoms assemble together into Si/Ge clusters on the C60 cage with an increase in the number of Si/Ge atoms.

Original languageEnglish
Pages (from-to)4498-4501
Number of pages4
JournalJournal of Physical Chemistry A
Volume106
Issue number18
DOIs
Publication statusPublished - 2002 May 9

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Germanium
Silicon
fullerenes
germanium
silicon
Atoms
atoms
rods
Photoelectron spectroscopy
Photoelectrons
Vaporization
fullerene C60
photoelectrons
mass spectroscopy
Gases
photoelectron spectroscopy
Spectroscopy
Lasers
gases
spectroscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Ohara, M., Nakamura, Y., Negishi, Y., Miyajima, K., Nakajima, A., & Kaya, K. (2002). Behavior of silicon and germanium clusters on a C60 fullerene. Journal of Physical Chemistry A, 106(18), 4498-4501. https://doi.org/10.1021/jp013420z

Behavior of silicon and germanium clusters on a C60 fullerene. / Ohara, M.; Nakamura, Y.; Negishi, Y.; Miyajima, K.; Nakajima, Atsushi; Kaya, K.

In: Journal of Physical Chemistry A, Vol. 106, No. 18, 09.05.2002, p. 4498-4501.

Research output: Contribution to journalArticle

Ohara, M, Nakamura, Y, Negishi, Y, Miyajima, K, Nakajima, A & Kaya, K 2002, 'Behavior of silicon and germanium clusters on a C60 fullerene', Journal of Physical Chemistry A, vol. 106, no. 18, pp. 4498-4501. https://doi.org/10.1021/jp013420z
Ohara, M. ; Nakamura, Y. ; Negishi, Y. ; Miyajima, K. ; Nakajima, Atsushi ; Kaya, K. / Behavior of silicon and germanium clusters on a C60 fullerene. In: Journal of Physical Chemistry A. 2002 ; Vol. 106, No. 18. pp. 4498-4501.
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