Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices

Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, Yasuhiro Shiraki

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We investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using S natSi/28 i isotope superlattices. A calculation based on diffusion equations involving {311} defects and boron-interstitial cluster models was employed to reproduce the diffusion profiles in silicon-implanted (intrinsic) and boron-implanted (extrinsic) silicon isotope superlattices, followed by annealing. To investigate the diffusion processes, the time evolution of the silicon self-interstitial profiles during the transient diffusion was simulated. The results directly demonstrate that excess neutral self-interstitials dominantly enhance the self-diffusion during the transient process in the intrinsic conditions, while doubly positively charged self-interstitials dominate the self-diffusion in the extrinsic conditions.

Original languageEnglish
Article number013504
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2009 Jul 9


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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