Bi-Substitution effect in La-Sr-Mn-O thin films for bolometric applications

Ken Ichi Hayashi, Eiji Ohta, Hideo Wada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

La0.7Sr0.3MnO3-δ (LSMO) films have a large temperature coefficient of resistance (TCR: defined as 1/R dR/dT) at near room temperature. Bi0.34La0.33Sr0.33MnO3-δ (BLSMO) film in which La in LSMO is substituted by Bi, was deposited at low temperature, 400°C, by a laser ablation method. The BLSMO film on the SiO2/Si (100) substrate is polycrystalline without any preferred orientations. The low-temperature deposition and the Bi substitution eliminate the Curie temperature of the BLSMO film, and raise its TCR. The film has a large TCR, more than 2%/K, in the wide temperature range of 10-150°C.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 A
Publication statusPublished - 2001 Mar 1

Fingerprint

Substitution reactions
substitutes
Thin films
thin films
Temperature
Laser ablation
Curie temperature
laser ablation
temperature
room temperature
Substrates
coefficients

Keywords

  • Bi-substitution effect
  • Laser ablation
  • Temperature coefficient of resistance
  • Uncooled infrared bolometer sensor
  • X-ray diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bi-Substitution effect in La-Sr-Mn-O thin films for bolometric applications. / Hayashi, Ken Ichi; Ohta, Eiji; Wada, Hideo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 3 A, 01.03.2001.

Research output: Contribution to journalArticle

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