Abstract
We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.
| Original language | English |
|---|---|
| Article number | 125331 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 81 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 Mar 29 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Bidirectional single-electron counting and the fluctuation theorem. / Utsumi, Y.; Golubev, D. S.; Marthaler, M.; Saitou, Keiji; Fujisawa, T.; Schön, Gerd.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 12, 125331, 29.03.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Bidirectional single-electron counting and the fluctuation theorem
AU - Utsumi, Y.
AU - Golubev, D. S.
AU - Marthaler, M.
AU - Saitou, Keiji
AU - Fujisawa, T.
AU - Schön, Gerd
PY - 2010/3/29
Y1 - 2010/3/29
N2 - We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.
AB - We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.
UR - http://www.scopus.com/inward/record.url?scp=77955164241&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955164241&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.81.125331
DO - 10.1103/PhysRevB.81.125331
M3 - Article
AN - SCOPUS:77955164241
VL - 81
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 12
M1 - 125331
ER -