Bifacial Heterojunction Back Contact Solar Cell: 29-mW/cm2Output Power Density in Standard Albedo Condition

Takaya Sugiura, Satoru Matsumoto, Nobuhiko Nakano

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A new crystalline-Si (c-Si) solar cell design based on bifacial heterojunction back contact (HBC) with a transparent conductive oxide (TCO) is proposed by the numerical simulation method. Three bifacial HBC schemes are evaluated and compared: full-area contact with an increase in the pitch distance, point contact, and point contact with indium tin oxide (ITO). The results reveal that point contact with ITO is the most optimal among the three aforenoted schemes. The bottleneck of bifacial HBC is caused by the extremely low carrier mobility in an amorphous Si (a-Si) region, and this can be resolved by applying ITO to form a full-contact area that covers all surfaces of the a-Si region. A maximum power density of 29 mW/cm2 is obtained from bifacial HBC, which is an extremely high output from a single-junction c-Si solar cell. The improvement in the maximum power density over the monofacial condition is 8% at 20% albedo.

Original languageEnglish
Pages (from-to)5645-5651
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number11
DOIs
Publication statusPublished - 2021 Nov 1

Keywords

  • Back contact solar cell
  • bifacial solar cell
  • crystalline Si (c-Si) solar cell
  • device simulation
  • heterojunction
  • technology computer-aided design

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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