Bismuth-substituted lanthanum manganite for bolometric applications

Ken Ichi Hayashi, Eiji Ohta, Hideo Wada, Hiroko Higuma

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we are exploring the use of perovskite manganese oxide for bolometric applications. To obtain a large temperature coefficient of resistance (TCR: defined as 1/R dR/dT) at near-room temperature, we formed (Bi, La)1-xSrxMnO3 (BLSMO) bulk samples. The substituted Bi in samples function to reduce the crystallization temperature and to eliminate the ferromagnetic phase. In this report, we discuss the issues related to the influence of the substituted Bi on features such as the surface morphologies, crystallinities and electrical transport properties. For the samples, the temperature dependence of resistivity indicates thermally activated behavior like that of a semiconductor, and a higher activation energy implies a larger TCR value. The maximum TCR value of the samples was 3.6%/K at room temperature.

Original languageEnglish
Pages (from-to)L1308-L1310
JournalJapanese journal of applied physics
Volume39
Issue number12 B
Publication statusPublished - 2000 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Hayashi, K. I., Ohta, E., Wada, H., & Higuma, H. (2000). Bismuth-substituted lanthanum manganite for bolometric applications. Japanese journal of applied physics, 39(12 B), L1308-L1310.