TY - JOUR
T1 - Body Bias Control for Renewable Energy Source with a High Inner Resistance
AU - Azegami, Keita
AU - Okuhara, Hayate
AU - Amano, Hideharu
N1 - Funding Information:
This work was performed as part of the “Ultra-Low Voltage Device Project” funded and supported by the Ministry of Economy, Trade, and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO). Also, this work was partially supported by JSPS KAKENHI S Grant Number 25220002. The authors thank the VLSI Design and Education Center (VDEC) and Syn-opsys for the EDA tools support. The authors also thank Prof. Nobuhiko Nakano and Mr. Takaya Sugiura for their kind advice on the model and measurement of solar battery.
Publisher Copyright:
© 2015 IEEE.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - Sensor nodes used in Internet of Things (IoT) are required to work an extremely long time without replacing the battery. Natural renewable energy such as a solar battery is a hopeful candidate for such nodes. Here, a power model for operating an Silicon on Insulator (SOI) device with a solar battery including a large inner resistance is proposed, and applied to a micro-controller V850E-star and an accelerator CMA-SOTB2. Unlike the ideal case, the maximum operational frequency was achieved with reverse biasing by suppressing the leakage current which decreases the supply voltage. Under the room light with a large inner resistance, the strong reverse bias is effective, while a relatively weak reverse bias is advantageous under the bright light. The proposed model is appeared to be useful to estimate the appropriate body bias voltage both for V850E-star and CMA-SOTB2. In the V850E-star, the estimated operational frequencies were different from the real chip, while they were relatively matched when CMA-SOTB2 was used under the low illuminance.
AB - Sensor nodes used in Internet of Things (IoT) are required to work an extremely long time without replacing the battery. Natural renewable energy such as a solar battery is a hopeful candidate for such nodes. Here, a power model for operating an Silicon on Insulator (SOI) device with a solar battery including a large inner resistance is proposed, and applied to a micro-controller V850E-star and an accelerator CMA-SOTB2. Unlike the ideal case, the maximum operational frequency was achieved with reverse biasing by suppressing the leakage current which decreases the supply voltage. Under the room light with a large inner resistance, the strong reverse bias is effective, while a relatively weak reverse bias is advantageous under the bright light. The proposed model is appeared to be useful to estimate the appropriate body bias voltage both for V850E-star and CMA-SOTB2. In the V850E-star, the estimated operational frequencies were different from the real chip, while they were relatively matched when CMA-SOTB2 was used under the low illuminance.
KW - Low power computing
KW - body biasing
KW - inner resistance
KW - silicon on thin box (SOTB)
KW - solar battery
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U2 - 10.1109/TMSCS.2018.2827980
DO - 10.1109/TMSCS.2018.2827980
M3 - Article
AN - SCOPUS:85045736293
SN - 2332-7766
VL - 4
SP - 605
EP - 612
JO - IEEE Transactions on Multi-Scale Computing Systems
JF - IEEE Transactions on Multi-Scale Computing Systems
IS - 4
M1 - 8340114
ER -
