Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature

Norihisa Miki, S. M. Spearing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-direct wafer bonding is a promising technology for manufacturing three-dimensional complex MEMS structures as well as SOI substrates. Amongst the various contributors to the bond quality, surface roughness at nanoscale plays a vital role. However, the effect of surface roughness on direct-bond quality has not been quantified. We conducted bonding experiments on silicon wafers with various surface roughness generated by chemical treatment. The bond quality was evaluated by measurement of the bonding energy. The surface roughness investigated by atomic force microscopy was directly correlated to the bond quality for the first time by means of the bearing ratio, which represents the ratio of the surface area lying above a given depth. The bearing ratio discussed herein is an appropriate criterion for the surface quality of silicon wafers to be direct-bonded.

Original languageEnglish
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1311-1314
Number of pages4
Volume2
ISBN (Print)0780377311, 9780780377318
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: 2003 Jun 82003 Jun 12

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
CountryUnited States
CityBoston
Period03/6/803/6/12

Keywords

  • Atomic force microscopy
  • Chemicals
  • Manufacturing
  • Micromechanical devices
  • Rough surfaces
  • Silicon
  • Surface roughness
  • Surface treatment
  • Temperature
  • Wafer bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Miki, N., & Spearing, S. M. (2003). Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers (Vol. 2, pp. 1311-1314). [1217014] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SENSOR.2003.1217014