Breakdown of Al/AlOx/Al Tunneling Junctions

Takeshi Morozumi, Hideo Kaiju, Yuki Ohtaka, Kazuo Shiiki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The breakdown of Al/Alx,/Al tunneling junctions is studied. Al (10nm)/AlOx(∼2.5nm)/Al (50 nm) tunneling junctions were fabricated on glass substrates by ion-beam mask sputtering. The sputtered Al film was oxidized in pure O2 gas for 4-40 h at room temperature. The AlOx, barrier height evaluated from a fit to the Simmons-Schottky equation was 0.38-1.7 eV. The current-voltage characteristics were measured by the four-probe method. The breakdown of Al/AlOx/Al tunneling junctions can be classified into two types on the basis of current-voltage characteristics. Type 1 breakdown shows an abrupt increase in current and a decrease in resistance at the maximum applied voltage. This type of breakdown occurs at the voltage when the energy level of the AlOx valence band is equal to the barrier height. It is concluded that type 1 breakdown is caused by the Zener mechanism. Type 2 breakdown shows an erratic change of current and resistance. The average electrical resistivities of AlO, are 7.8×10 3 and 1.17times;103 Omega;m for specimens showing type 1 and type 2 breakdowns, respectively. It is considered that some defects in AlOx result in the low breakdown voltage for type 2 breakdown.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Current voltage characteristics
breakdown
Electric potential
Valence bands
Electric breakdown
Electron energy levels
Ion beams
Sputtering
Masks
Glass
Defects
electric potential
Substrates
Gases
Temperature
electrical faults
masks
sputtering
energy levels
ion beams

Keywords

  • Barrier height
  • Ion-beam sputtering
  • Schottky leak current
  • Tunneling junction
  • Zener breakdown

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Breakdown of Al/AlOx/Al Tunneling Junctions. / Morozumi, Takeshi; Kaiju, Hideo; Ohtaka, Yuki; Shiiki, Kazuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 1, 01.01.2004, p. 197-200.

Research output: Contribution to journalArticle

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AB - The breakdown of Al/Alx,/Al tunneling junctions is studied. Al (10nm)/AlOx(∼2.5nm)/Al (50 nm) tunneling junctions were fabricated on glass substrates by ion-beam mask sputtering. The sputtered Al film was oxidized in pure O2 gas for 4-40 h at room temperature. The AlOx, barrier height evaluated from a fit to the Simmons-Schottky equation was 0.38-1.7 eV. The current-voltage characteristics were measured by the four-probe method. The breakdown of Al/AlOx/Al tunneling junctions can be classified into two types on the basis of current-voltage characteristics. Type 1 breakdown shows an abrupt increase in current and a decrease in resistance at the maximum applied voltage. This type of breakdown occurs at the voltage when the energy level of the AlOx valence band is equal to the barrier height. It is concluded that type 1 breakdown is caused by the Zener mechanism. Type 2 breakdown shows an erratic change of current and resistance. The average electrical resistivities of AlO, are 7.8×10 3 and 1.17times;103 Omega;m for specimens showing type 1 and type 2 breakdowns, respectively. It is considered that some defects in AlOx result in the low breakdown voltage for type 2 breakdown.

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