Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

Arne Laucht, Stephanie Simmons, Rachpon Kalra, Guilherme Tosi, Juan P. Dehollain, Juha T. Muhonen, Solomon Freer, Fay E. Hudson, Kohei M Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We investigate the dynamics of a strongly driven microwave-dressed donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field B1 is used to dress the electron spin and create a new quantum system with a level splitting proportional to B1. The dressed two-level system can then be driven by modulating the detuning Δν between the microwave source frequency νMW and the electron spin transition frequency νe at the frequency of the level splitting. The resulting dressed qubit Rabi frequency ΩRρ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.

Original languageEnglish
Article number161302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume94
Issue number16
DOIs
Publication statusPublished - 2016 Oct 17

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electron spin
Microwaves
Electrons
microwaves
approximation
Amplitude modulation
Frequency modulation
Silicon
Electron transitions
Cryogenics
frequency modulation
cryogenics
Magnetic fields
breakdown
deviation
oscillations
silicon
magnetic fields

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Breaking the rotating wave approximation for a strongly driven dressed single-electron spin. / Laucht, Arne; Simmons, Stephanie; Kalra, Rachpon; Tosi, Guilherme; Dehollain, Juan P.; Muhonen, Juha T.; Freer, Solomon; Hudson, Fay E.; Itoh, Kohei M; Jamieson, David N.; McCallum, Jeffrey C.; Dzurak, Andrew S.; Morello, Andrea.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 94, No. 16, 161302, 17.10.2016.

Research output: Contribution to journalArticle

Laucht, A, Simmons, S, Kalra, R, Tosi, G, Dehollain, JP, Muhonen, JT, Freer, S, Hudson, FE, Itoh, KM, Jamieson, DN, McCallum, JC, Dzurak, AS & Morello, A 2016, 'Breaking the rotating wave approximation for a strongly driven dressed single-electron spin', Physical Review B - Condensed Matter and Materials Physics, vol. 94, no. 16, 161302. https://doi.org/10.1103/PhysRevB.94.161302
Laucht, Arne ; Simmons, Stephanie ; Kalra, Rachpon ; Tosi, Guilherme ; Dehollain, Juan P. ; Muhonen, Juha T. ; Freer, Solomon ; Hudson, Fay E. ; Itoh, Kohei M ; Jamieson, David N. ; McCallum, Jeffrey C. ; Dzurak, Andrew S. ; Morello, Andrea. / Breaking the rotating wave approximation for a strongly driven dressed single-electron spin. In: Physical Review B - Condensed Matter and Materials Physics. 2016 ; Vol. 94, No. 16.
@article{a30ab35f83854aecbf46df25c878429d,
title = "Breaking the rotating wave approximation for a strongly driven dressed single-electron spin",
abstract = "We investigate the dynamics of a strongly driven microwave-dressed donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field B1 is used to dress the electron spin and create a new quantum system with a level splitting proportional to B1. The dressed two-level system can then be driven by modulating the detuning Δν between the microwave source frequency νMW and the electron spin transition frequency νe at the frequency of the level splitting. The resulting dressed qubit Rabi frequency ΩRρ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.",
author = "Arne Laucht and Stephanie Simmons and Rachpon Kalra and Guilherme Tosi and Dehollain, {Juan P.} and Muhonen, {Juha T.} and Solomon Freer and Hudson, {Fay E.} and Itoh, {Kohei M} and Jamieson, {David N.} and McCallum, {Jeffrey C.} and Dzurak, {Andrew S.} and Andrea Morello",
year = "2016",
month = "10",
day = "17",
doi = "10.1103/PhysRevB.94.161302",
language = "English",
volume = "94",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "16",

}

TY - JOUR

T1 - Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

AU - Laucht, Arne

AU - Simmons, Stephanie

AU - Kalra, Rachpon

AU - Tosi, Guilherme

AU - Dehollain, Juan P.

AU - Muhonen, Juha T.

AU - Freer, Solomon

AU - Hudson, Fay E.

AU - Itoh, Kohei M

AU - Jamieson, David N.

AU - McCallum, Jeffrey C.

AU - Dzurak, Andrew S.

AU - Morello, Andrea

PY - 2016/10/17

Y1 - 2016/10/17

N2 - We investigate the dynamics of a strongly driven microwave-dressed donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field B1 is used to dress the electron spin and create a new quantum system with a level splitting proportional to B1. The dressed two-level system can then be driven by modulating the detuning Δν between the microwave source frequency νMW and the electron spin transition frequency νe at the frequency of the level splitting. The resulting dressed qubit Rabi frequency ΩRρ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.

AB - We investigate the dynamics of a strongly driven microwave-dressed donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field B1 is used to dress the electron spin and create a new quantum system with a level splitting proportional to B1. The dressed two-level system can then be driven by modulating the detuning Δν between the microwave source frequency νMW and the electron spin transition frequency νe at the frequency of the level splitting. The resulting dressed qubit Rabi frequency ΩRρ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=84992160338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992160338&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.94.161302

DO - 10.1103/PhysRevB.94.161302

M3 - Article

AN - SCOPUS:84992160338

VL - 94

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 16

M1 - 161302

ER -