@inproceedings{5b72da53753b45ea9c5fb33b96bbda23,
title = "Bright photoemission from interacting excitons at the interface localized sites in CdS/ZnSe type-II quantum structures",
abstract = "We investigated the bright photoluminescence (PL) of CdS/ZnSe type-II quantum structures in which the lateral potential fluctuation plays an important role on the dynamics of carriers due to their long lifetime. The temperature dependence of PL energy showed the typical {"}s{"} -like shape with increasing temperature and Monte Carlo simulation well reproduced the experimental results qualitatively and quantitatively. The exponential distribution of localization energy for excitons was supposed by the simulation. We conclude that the bright PL originates in the recombination of localized interacting excitons gathered at a local potential minimum.",
keywords = "Energy relaxation, Indirect transition, Interface roughness, Type-II heterostructure",
author = "Kazuo Ono and Makoto Nakajima and Tom Suemoto and Takayuki Makino and Keiji Saito and Hirofumi Mino and Ryoichi Akimoto and Shojiro Takeyama",
year = "2007",
month = dec,
day = "1",
doi = "10.1063/1.2729968",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "467--468",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}