Bright photoemission from interacting excitons at the interface localized sites in CdS/ZnSe type-II quantum structures

Kazuo Ono, Makoto Nakajima, Tom Suemoto, Takayuki Makino, Keiji Saito, Hirofumi Mino, Ryoichi Akimoto, Shojiro Takeyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated the bright photoluminescence (PL) of CdS/ZnSe type-II quantum structures in which the lateral potential fluctuation plays an important role on the dynamics of carriers due to their long lifetime. The temperature dependence of PL energy showed the typical "s" -like shape with increasing temperature and Monte Carlo simulation well reproduced the experimental results qualitatively and quantitatively. The exponential distribution of localization energy for excitons was supposed by the simulation. We conclude that the bright PL originates in the recombination of localized interacting excitons gathered at a local potential minimum.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages467-468
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • Energy relaxation
  • Indirect transition
  • Interface roughness
  • Type-II heterostructure

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Ono, K., Nakajima, M., Suemoto, T., Makino, T., Saito, K., Mino, H., Akimoto, R., & Takeyama, S. (2007). Bright photoemission from interacting excitons at the interface localized sites in CdS/ZnSe type-II quantum structures. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 467-468). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2729968