Buried p-n junction formation in CuGaSe2 thin-film solar cells

Shogo Ishizuka; Akimasa Yamada; Paul J. Fons; Yukiko Kamikawa-Shimizu; Hironori Komaki; Hajime Shibata; Shigeru Niki

doi:10.1063/1.4861858

Buried p-n junction formation in CuGaSe₂ thin-film solar cells

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Yukiko Kamikawa-Shimizu, Hironori Komaki, Hajime Shibata, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

CuGaSe₂/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe ₂/CdS interface could be described as a CuGaSe₂/Cu- deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe₂/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe₂ has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa₃Se ₅ can play the role of an n-type material.

Original language	English
Article number	031606
Journal	Applied Physics Letters
Volume	104
Issue number	3
DOIs	https://doi.org/10.1063/1.4861858
Publication status	Published - 2014 Jan 20
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4861858

Fingerprint Dive into the research topics of 'Buried p-n junction formation in CuGaSe<sub>2</sub> thin-film solar cells'. Together they form a unique fingerprint.

Cite this

@article{75fd50fbe6d1424ba1409ac2d07b3b88,

title = "Buried p-n junction formation in CuGaSe2 thin-film solar cells",

abstract = "CuGaSe2/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe 2/CdS interface could be described as a CuGaSe2/Cu- deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe2/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe2 has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa3Se 5 can play the role of an n-type material.",

author = "Shogo Ishizuka and Akimasa Yamada and Fons, {Paul J.} and Yukiko Kamikawa-Shimizu and Hironori Komaki and Hajime Shibata and Shigeru Niki",

year = "2014",

month = jan,

day = "20",

doi = "10.1063/1.4861858",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Buried p-n junction formation in CuGaSe2 thin-film solar cells

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Fons, Paul J.

AU - Kamikawa-Shimizu, Yukiko

AU - Komaki, Hironori

AU - Shibata, Hajime

AU - Niki, Shigeru

PY - 2014/1/20

Y1 - 2014/1/20

N2 - CuGaSe2/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe 2/CdS interface could be described as a CuGaSe2/Cu- deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe2/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe2 has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa3Se 5 can play the role of an n-type material.

AB - CuGaSe2/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe 2/CdS interface could be described as a CuGaSe2/Cu- deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe2/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe2 has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa3Se 5 can play the role of an n-type material.

UR - http://www.scopus.com/inward/record.url?scp=84893430251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893430251&partnerID=8YFLogxK

U2 - 10.1063/1.4861858

DO - 10.1063/1.4861858

M3 - Article

AN - SCOPUS:84893430251

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 031606