Abstract
CuGaSe2/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe 2/CdS interface could be described as a CuGaSe2/Cu- deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe2/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe2 has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa3Se 5 can play the role of an n-type material.
Original language | English |
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Article number | 031606 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 Jan 20 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)