Buried p-n junction formation in CuGaSe2 thin-film solar cells

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Yukiko Kamikawa-Shimizu, Hironori Komaki, Hajime Shibata, Shigeru Niki

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


CuGaSe2/CdS interfaces and the mechanism behind the hetero p-n junction formation were investigated using solar cell devices which demonstrated about a 10% energy conversion efficiency. It was found that the CuGaSe 2/CdS interface could be described as a CuGaSe2/Cu- deficient Cu-Ga-Se layer (CDL)/CdS structure and the p-n junction was located at the CuGaSe2/CDL interface that was present 50-100 nm from the CDL/CdS interface. While the difficulty of the realization of equilibrium n-type CuGaSe2 has been generally recognized, this result suggests that CDL consisting of ordered vacancy compound phases such as CuGa3Se 5 can play the role of an n-type material.

Original languageEnglish
Article number031606
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2014 Jan 20
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Buried p-n junction formation in CuGaSe2 thin-film solar cells'. Together they form a unique fingerprint.

Cite this