Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

T. Kinoshita, Kohei M Itoh, J. Muto, M. Schadt, G. Pensl, K. Takeda

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 1
Publication statusPublished - 1998

Fingerprint

Hall mobility
Anisotropy
anisotropy
Conduction bands
Interfacial energy
Tobacco Products
surface energy
conduction bands
Single crystals
temperature dependence
Electrons
single crystals
electrons
Temperature
Direction compound

Keywords

  • 4H-SiC
  • 6H-SiC
  • Anisotropy
  • Hall Effect
  • Mobility

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kinoshita, T., Itoh, K. M., Muto, J., Schadt, M., Pensl, G., & Takeda, K. (1998). Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum, 264-268(PART 1), 295-298.

Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. / Kinoshita, T.; Itoh, Kohei M; Muto, J.; Schadt, M.; Pensl, G.; Takeda, K.

In: Materials Science Forum, Vol. 264-268, No. PART 1, 1998, p. 295-298.

Research output: Contribution to journalArticle

Kinoshita, T, Itoh, KM, Muto, J, Schadt, M, Pensl, G & Takeda, K 1998, 'Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC', Materials Science Forum, vol. 264-268, no. PART 1, pp. 295-298.
Kinoshita T, Itoh KM, Muto J, Schadt M, Pensl G, Takeda K. Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum. 1998;264-268(PART 1):295-298.
Kinoshita, T. ; Itoh, Kohei M ; Muto, J. ; Schadt, M. ; Pensl, G. ; Takeda, K. / Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. In: Materials Science Forum. 1998 ; Vol. 264-268, No. PART 1. pp. 295-298.
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