Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

T. Kinoshita, K. M. Itoh, J. Muto, M. Schadt, G. Pensl, K. Takeda

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Abstract

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 1
Publication statusPublished - 1998 Dec 1

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Keywords

  • 4H-SiC
  • 6H-SiC
  • Anisotropy
  • Hall Effect
  • Mobility

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kinoshita, T., Itoh, K. M., Muto, J., Schadt, M., Pensl, G., & Takeda, K. (1998). Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum, 264-268(PART 1), 295-298.