A novel capacitive accelerometer using SDB-SOI(Silicon Direct Bonding - Silicon On Insulator) structure has been proposed. The mass and beams of the accelerometer were fabricated with single crystal silicon layer in the thickness of 10 μm. The beam was formed in Swastika shape to obtain longest beam in minimum area. The fabrication process was simplified by utilization of SOI structure. Seven kinds of accelerometers for different measurement ranges were integrated in the same chip. The capacitance changes of the accelerometers were detected by capacitance to voltage converter IC(TI28882D), and the output characteristics were evaluated.
|Number of pages||4|
|Publication status||Published - 1995 Dec 1|
|Event||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden|
Duration: 1995 Jun 25 → 1995 Jun 29
|Other||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)|
|Period||95/6/25 → 95/6/29|
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