Capacitive accelerometer using SBD-SOI structure

Yoshinori Matsumoto, Moritaka Iwakiri, Hidekazu Tanaka, Makoto Ishida, Tetsuro Nakamura

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

A novel capacitive accelerometer using SDB-SOI(Silicon Direct Bonding - Silicon On Insulator) structure has been proposed. The mass and beams of the accelerometer were fabricated with single crystal silicon layer in the thickness of 10 μm. The beam was formed in Swastika shape to obtain longest beam in minimum area. The fabrication process was simplified by utilization of SOI structure. Seven kinds of accelerometers for different measurement ranges were integrated in the same chip. The capacitance changes of the accelerometers were detected by capacitance to voltage converter IC(TI28882D), and the output characteristics were evaluated.

Original languageEnglish
Pages550-553
Number of pages4
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
Duration: 1995 Jun 251995 Jun 29

Other

OtherProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period95/6/2595/6/29

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Matsumoto, Y., Iwakiri, M., Tanaka, H., Ishida, M., & Nakamura, T. (1995). Capacitive accelerometer using SBD-SOI structure. 550-553. Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden, .