Carbon nanotube CVD-growth technology for future ULSI interconnects (invited)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The technological advancements of carbon nanotube (CNT) material technologies and the potential of metallic CNT vias for future ULSI interconnections were described. CNTs have ultra-high thermal conductivity, as high as that of diamond, and can solve the problem of heat removal in ULSIs. CNTs also offer the advantage of ballistic transport along the tube, which can be the solution to the high-resistance problem in scaled-down vias. It was found that the estimated current density of on nanotube reached about 2.0×108 A/cm2, which is two orders of magnitude higher than the current density for Cu.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages318-319
Number of pages2
Publication statusPublished - 2004 Dec 1
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 2004 Oct 262004 Oct 29

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period04/10/2604/10/29

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Awano, Y. (2004). Carbon nanotube CVD-growth technology for future ULSI interconnects (invited). In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 318-319). (Digest of Papers - Microprocesses and Nanotechnology 2004).