Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes

Masahiro Horibe, Mizuhisa Nihei, Daiyu Kondo, Akio Kawabata, Yuji Awano

    Research output: Contribution to journalArticlepeer-review

    42 Citations (Scopus)

    Abstract

    We succeeded in developing carbon nanotube (CNT) vias specifically adapted for the copper interconnect process used in ultra large-scale integrated circuits. The CNTs were grown selectively on titanium films using Co catalyst films. The use of tantalum enabled CNTs to be grown on Cu lines and prevented any increase in the sheet resistance of the Cu lines. A Cu wire/CNT via/Cu wire structure was fabricated and low resistance of the via was demonstrated. In addition, tests showed that a high current density of about 106 A/cm2 flowed into the CNT via for 125 hours.

    Original languageEnglish
    Pages (from-to)5309-5312
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume44
    Issue number7 A
    DOIs
    Publication statusPublished - 2005 Jul 8

    Keywords

    • Carbon nanotubes (CNTs)
    • Cu/CNTs hybrid interconnection
    • Tantalum barrier
    • Via

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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