Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes

Masahiro Horibe, Mizuhisa Nihei, Daiyu Kondo, Akio Kawabata, Yuji Awano

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

We succeeded in developing carbon nanotube (CNT) vias specifically adapted for the copper interconnect process used in ultra large-scale integrated circuits. The CNTs were grown selectively on titanium films using Co catalyst films. The use of tantalum enabled CNTs to be grown on Cu lines and prevented any increase in the sheet resistance of the Cu lines. A Cu wire/CNT via/Cu wire structure was fabricated and low resistance of the via was demonstrated. In addition, tests showed that a high current density of about 106 A/cm2 flowed into the CNT via for 125 hours.

Original languageEnglish
Pages (from-to)5309-5312
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 A
DOIs
Publication statusPublished - 2005 Jul 8
Externally publishedYes

Fingerprint

Tantalum
barrier layers
tantalum
Carbon nanotubes
carbon nanotubes
Wire
Sheet resistance
Integrated circuits
wire
Current density
Titanium
Copper
low resistance
Catalysts
integrated circuits
high current
titanium
current density
catalysts
copper

Keywords

  • Carbon nanotubes (CNTs)
  • Cu/CNTs hybrid interconnection
  • Tantalum barrier
  • Via

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes. / Horibe, Masahiro; Nihei, Mizuhisa; Kondo, Daiyu; Kawabata, Akio; Awano, Yuji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 A, 08.07.2005, p. 5309-5312.

Research output: Contribution to journalArticle

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