Abstract
We propose a new approach to fabricating carbon nanotube (CNT) via interconnects for future LSIs, which uses preformed catalyst nanoparticles to grow the CNTs. A newly designed impactor provided size-classified catalyst particles. For the new approach, we employ a TiN contact layer which is more resistant to oxidation and enables us to form a lower resistance ohmic contact between CNTs and wiring layers. The resultant CNT-via resistance was 0.59 Ω for 2-μm vias, which is the smallest ever reported. We also study the CNT nucleation process using molecular dynamics and discuss how to remove amorphous carbon from the nucleation process.
| Original language | English |
|---|---|
| Pages (from-to) | 3611-3616 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 203 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2006 Nov |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Carbon nanotube via interconnect technologies : Size-classified catalyst nanoparticles and low-resistance ohmic contact formation. / Awano, Yuji; Sato, S.; Kondo, D.; Ohfuti, M.; Kawabata, A.; Nihei, M.; Yokoyama, N.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, No. 14, 11.2006, p. 3611-3616.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Carbon nanotube via interconnect technologies
T2 - Size-classified catalyst nanoparticles and low-resistance ohmic contact formation
AU - Awano, Yuji
AU - Sato, S.
AU - Kondo, D.
AU - Ohfuti, M.
AU - Kawabata, A.
AU - Nihei, M.
AU - Yokoyama, N.
PY - 2006/11
Y1 - 2006/11
N2 - We propose a new approach to fabricating carbon nanotube (CNT) via interconnects for future LSIs, which uses preformed catalyst nanoparticles to grow the CNTs. A newly designed impactor provided size-classified catalyst particles. For the new approach, we employ a TiN contact layer which is more resistant to oxidation and enables us to form a lower resistance ohmic contact between CNTs and wiring layers. The resultant CNT-via resistance was 0.59 Ω for 2-μm vias, which is the smallest ever reported. We also study the CNT nucleation process using molecular dynamics and discuss how to remove amorphous carbon from the nucleation process.
AB - We propose a new approach to fabricating carbon nanotube (CNT) via interconnects for future LSIs, which uses preformed catalyst nanoparticles to grow the CNTs. A newly designed impactor provided size-classified catalyst particles. For the new approach, we employ a TiN contact layer which is more resistant to oxidation and enables us to form a lower resistance ohmic contact between CNTs and wiring layers. The resultant CNT-via resistance was 0.59 Ω for 2-μm vias, which is the smallest ever reported. We also study the CNT nucleation process using molecular dynamics and discuss how to remove amorphous carbon from the nucleation process.
UR - http://www.scopus.com/inward/record.url?scp=34248366606&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34248366606&partnerID=8YFLogxK
U2 - 10.1002/pssa.200622415
DO - 10.1002/pssa.200622415
M3 - Article
AN - SCOPUS:34248366606
VL - 203
SP - 3611
EP - 3616
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 14
ER -