Abstract
We propose a new approach to fabricating carbon nanotube (CNT) via interconnects for future LSIs, which uses preformed catalyst nanoparticles to grow the CNTs. A newly designed impactor provided size-classified catalyst particles. For the new approach, we employ a TiN contact layer which is more resistant to oxidation and enables us to form a lower resistance ohmic contact between CNTs and wiring layers. The resultant CNT-via resistance was 0.59 Ω for 2-μm vias, which is the smallest ever reported. We also study the CNT nucleation process using molecular dynamics and discuss how to remove amorphous carbon from the nucleation process.
| Original language | English |
|---|---|
| Pages (from-to) | 3611-3616 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 203 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2006 Nov 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Awano, Y., Sato, S., Kondo, D., Ohfuti, M., Kawabata, A., Nihei, M., & Yokoyama, N. (2006). Carbon nanotube via interconnect technologies: Size-classified catalyst nanoparticles and low-resistance ohmic contact formation. Physica Status Solidi (A) Applications and Materials Science, 203(14), 3611-3616. https://doi.org/10.1002/pssa.200622415