Carbon nanotube via interconnects with large current carrying capacity

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Tomo Murakami, Daiyu Kondo, Mari Ohfuti, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm6 at 105 °C for 100 hours without any deterioration.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages541-543
Number of pages3
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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