Carbon nanotube vias for multilevel interconnects using CMP techniques

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Daiyu Kondo, Masahiro Horibe, Hiroki Shioya, Taisuke Iwai, Yuji Awano

Research output: Contribution to conferencePaper

Abstract

We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The total resistance of the CNT via comprised of about 1, 000 tubes, was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel, through the tubes. We have also demonstrated a mechanical polishing technique for CNT vias. The 1-μm-high outprojecting CNTs were polished using a diamond slurry of 30-μm-diameter particles mixed in oil at pressures below 18 kPa. Because the adhesion strength of the CNTs was about 5.5 MPa, the CNT vias were able to withstand the mechanical stress applied during the polishing process.

Original languageEnglish
Pages527-534
Number of pages8
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States
Duration: 2005 Feb 232005 Feb 25

Other

Other10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
CountryUnited States
CityFremont, CA
Period05/2/2305/2/25

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Nihei, M., Kawabata, A., Sato, S., Kondo, D., Horibe, M., Shioya, H., Iwai, T., & Awano, Y. (2005). Carbon nanotube vias for multilevel interconnects using CMP techniques. 527-534. Paper presented at 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States.