Carbon nanotube vias for multilevel interconnects using CMP techniques

Mizuhisa Nihei; Akio Kawabata; Shintaro Sato; Daiyu Kondo; Masahiro Horibe; Hiroki Shioya; Taisuke Iwai; Yuji Awano

Carbon nanotube vias for multilevel interconnects using CMP techniques

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Daiyu Kondo, Masahiro Horibe, Hiroki Shioya, Taisuke Iwai, Yuji Awano

Research output: Contribution to conference › Paper › peer-review

Abstract

We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The total resistance of the CNT via comprised of about 1, 000 tubes, was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel, through the tubes. We have also demonstrated a mechanical polishing technique for CNT vias. The 1-μm-high outprojecting CNTs were polished using a diamond slurry of 30-μm-diameter particles mixed in oil at pressures below 18 kPa. Because the adhesion strength of the CNTs was about 5.5 MPa, the CNT vias were able to withstand the mechanical stress applied during the polishing process.

Original language	English
Pages	527-534
Number of pages	8
Publication status	Published - 2005
Externally published	Yes
Event	10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States Duration: 2005 Feb 23 → 2005 Feb 25

Other

Other	10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
Country/Territory	United States
City	Fremont, CA
Period	05/2/23 → 05/2/25

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Carbon nanotube vias for multilevel interconnects using CMP techniques. / Nihei, Mizuhisa; Kawabata, Akio; Sato, Shintaro et al.

2005. 527-534 Paper presented at 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States.

Research output: Contribution to conference › Paper › peer-review

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abstract = "We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The total resistance of the CNT via comprised of about 1, 000 tubes, was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel, through the tubes. We have also demonstrated a mechanical polishing technique for CNT vias. The 1-μm-high outprojecting CNTs were polished using a diamond slurry of 30-μm-diameter particles mixed in oil at pressures below 18 kPa. Because the adhesion strength of the CNTs was about 5.5 MPa, the CNT vias were able to withstand the mechanical stress applied during the polishing process.",

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AU - Nihei, Mizuhisa

AU - Kawabata, Akio

AU - Sato, Shintaro

AU - Kondo, Daiyu

AU - Horibe, Masahiro

AU - Shioya, Hiroki

AU - Iwai, Taisuke

AU - Awano, Yuji

PY - 2005

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AB - We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The total resistance of the CNT via comprised of about 1, 000 tubes, was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel, through the tubes. We have also demonstrated a mechanical polishing technique for CNT vias. The 1-μm-high outprojecting CNTs were polished using a diamond slurry of 30-μm-diameter particles mixed in oil at pressures below 18 kPa. Because the adhesion strength of the CNTs was about 5.5 MPa, the CNT vias were able to withstand the mechanical stress applied during the polishing process.

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Carbon nanotube vias for multilevel interconnects using CMP techniques

Abstract

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ASJC Scopus subject areas

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