Carbon nanotube vias for multilevel interconnects using CMP techniques

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Daiyu Kondo, Masahiro Horibe, Hiroki Shioya, Taisuke Iwai, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The total resistance of the CNT via comprised of about 1, 000 tubes, was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel, through the tubes. We have also demonstrated a mechanical polishing technique for CNT vias. The 1-μm-high outprojecting CNTs were polished using a diamond slurry of 30-μm-diameter particles mixed in oil at pressures below 18 kPa. Because the adhesion strength of the CNTs was about 5.5 MPa, the CNT vias were able to withstand the mechanical stress applied during the polishing process.

Original languageEnglish
Title of host publication2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
Pages527-534
Number of pages8
Publication statusPublished - 2005
Externally publishedYes
Event10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States
Duration: 2005 Feb 232005 Feb 25

Other

Other10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
CountryUnited States
CityFremont, CA
Period05/2/2305/2/25

Fingerprint

Carbon nanotubes
Polishing
Titanium carbide
Ohmic contacts
Bond strength (materials)
Tantalum
Growth temperature
Electric wiring
Chemical vapor deposition
Cobalt
Diamonds
Copper
Catalysts

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Nihei, M., Kawabata, A., Sato, S., Kondo, D., Horibe, M., Shioya, H., ... Awano, Y. (2005). Carbon nanotube vias for multilevel interconnects using CMP techniques. In 2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 (pp. 527-534)

Carbon nanotube vias for multilevel interconnects using CMP techniques. / Nihei, Mizuhisa; Kawabata, Akio; Sato, Shintaro; Kondo, Daiyu; Horibe, Masahiro; Shioya, Hiroki; Iwai, Taisuke; Awano, Yuji.

2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005. 2005. p. 527-534.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nihei, M, Kawabata, A, Sato, S, Kondo, D, Horibe, M, Shioya, H, Iwai, T & Awano, Y 2005, Carbon nanotube vias for multilevel interconnects using CMP techniques. in 2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005. pp. 527-534, 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States, 05/2/23.
Nihei M, Kawabata A, Sato S, Kondo D, Horibe M, Shioya H et al. Carbon nanotube vias for multilevel interconnects using CMP techniques. In 2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005. 2005. p. 527-534
Nihei, Mizuhisa ; Kawabata, Akio ; Sato, Shintaro ; Kondo, Daiyu ; Horibe, Masahiro ; Shioya, Hiroki ; Iwai, Taisuke ; Awano, Yuji. / Carbon nanotube vias for multilevel interconnects using CMP techniques. 2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005. 2005. pp. 527-534
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