TY - GEN
T1 - Carbon nanotubes for VLSI
T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
AU - Awano, Y.
AU - Sato, S.
AU - Nihei, M.
AU - Sakai, T.
AU - Ohno, Y.
AU - Mizutani, T.
PY - 2011/7/11
Y1 - 2011/7/11
N2 - We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.
AB - We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.
UR - http://www.scopus.com/inward/record.url?scp=79960002985&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960002985&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2011.5872210
DO - 10.1109/VTSA.2011.5872210
M3 - Conference contribution
AN - SCOPUS:79960002985
SN - 9781424484928
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 10
EP - 11
BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Y2 - 25 April 2011 through 27 April 2011
ER -