Carbon nanotubes for VLSI: Interconnect and transistor applications

Yuji Awano, S. Sato, M. Nihei, T. Sakai, Y. Ohno, T. Mizutani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

Original languageEnglish
Title of host publicationInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages10-11
Number of pages2
DOIs
Publication statusPublished - 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: 2011 Apr 252011 Apr 27

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period11/4/2511/4/27

Fingerprint

Carbon Nanotubes
very large scale integration
Field effect transistors
Carbon nanotubes
Transistors
transistors
carbon nanotubes
field effect transistors
Single-walled carbon nanotubes (SWCN)
inverters
Oxides
Chemical vapor deposition
Current density
high current
CMOS
polarity
vapor deposition
current density
Air
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Awano, Y., Sato, S., Nihei, M., Sakai, T., Ohno, Y., & Mizutani, T. (2011). Carbon nanotubes for VLSI: Interconnect and transistor applications. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings (pp. 10-11). [5872210] https://doi.org/10.1109/VTSA.2011.5872210

Carbon nanotubes for VLSI : Interconnect and transistor applications. / Awano, Yuji; Sato, S.; Nihei, M.; Sakai, T.; Ohno, Y.; Mizutani, T.

International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. p. 10-11 5872210.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Awano, Y, Sato, S, Nihei, M, Sakai, T, Ohno, Y & Mizutani, T 2011, Carbon nanotubes for VLSI: Interconnect and transistor applications. in International Symposium on VLSI Technology, Systems, and Applications, Proceedings., 5872210, pp. 10-11, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 11/4/25. https://doi.org/10.1109/VTSA.2011.5872210
Awano Y, Sato S, Nihei M, Sakai T, Ohno Y, Mizutani T. Carbon nanotubes for VLSI: Interconnect and transistor applications. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. p. 10-11. 5872210 https://doi.org/10.1109/VTSA.2011.5872210
Awano, Yuji ; Sato, S. ; Nihei, M. ; Sakai, T. ; Ohno, Y. ; Mizutani, T. / Carbon nanotubes for VLSI : Interconnect and transistor applications. International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. pp. 10-11
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