Abstract
We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.
| Original language | English |
|---|---|
| Title of host publication | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
| Pages | 10-11 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 2011 Apr 25 → 2011 Apr 27 |
Other
| Other | 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 |
|---|---|
| Country | Taiwan, Province of China |
| City | Hsinchu |
| Period | 11/4/25 → 11/4/27 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Carbon nanotubes for VLSI : Interconnect and transistor applications. / Awano, Yuji; Sato, S.; Nihei, M.; Sakai, T.; Ohno, Y.; Mizutani, T.
International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2011. p. 10-11 5872210.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Carbon nanotubes for VLSI
T2 - Interconnect and transistor applications
AU - Awano, Yuji
AU - Sato, S.
AU - Nihei, M.
AU - Sakai, T.
AU - Ohno, Y.
AU - Mizutani, T.
PY - 2011
Y1 - 2011
N2 - We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.
AB - We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.
UR - http://www.scopus.com/inward/record.url?scp=79960002985&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960002985&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2011.5872210
DO - 10.1109/VTSA.2011.5872210
M3 - Conference contribution
AN - SCOPUS:79960002985
SN - 9781424484928
SP - 10
EP - 11
BT - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ER -