Carbon nanotubes for VLSI: Interconnect and transistor applications

Y. Awano; S. Sato; M. Nihei; T. Sakai; Y. Ohno; T. Mizutani

doi:10.1109/VTSA.2011.5872210

Carbon nanotubes for VLSI: Interconnect and transistor applications

Y. Awano, S. Sato, M. Nihei, T. Sakai, Y. Ohno, T. Mizutani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 10¹³/cm²) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	10-11
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872210
Publication status	Published - 2011 Jul 11
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 2011 Apr 25 → 2011 Apr 27

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	11/4/25 → 11/4/27

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/VTSA.2011.5872210

Cite this

Awano, Y., Sato, S., Nihei, M., Sakai, T., Ohno, Y., & Mizutani, T. (2011). Carbon nanotubes for VLSI: Interconnect and transistor applications. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 10-11). [5872210] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872210

Carbon nanotubes for VLSI : Interconnect and transistor applications. / Awano, Y.; Sato, S.; Nihei, M. et al.

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 10-11 5872210 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Awano, Y, Sato, S, Nihei, M, Sakai, T, Ohno, Y & Mizutani, T 2011, Carbon nanotubes for VLSI: Interconnect and transistor applications. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872210, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 10-11, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 11/4/25. https://doi.org/10.1109/VTSA.2011.5872210

Awano Y, Sato S, Nihei M, Sakai T, Ohno Y, Mizutani T. Carbon nanotubes for VLSI: Interconnect and transistor applications. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 10-11. 5872210. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872210

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Carbon nanotubes for VLSI: Interconnect and transistor applications

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